Realization of an Ideal Cairo Tessellation in Nickel Diazenide NiN2: High-Pressure Route to Pentagonal 2D Materials
- Howard Univ., Washington, DC (United States); Carnegie Inst. for Science, Washington, DC (United States)
- Howard Univ., Washington, DC (United States)
- National Univ. of Science and Technology “MISIS”, Moscow (Russia)
- Linköping Univ. (Sweden)
- Univ. of Chicago, IL (United States)
- Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany)
- Argonne National Lab. (ANL), Lemont, IL (United States)
- Carnegie Inst. for Science, Washington, DC (United States)
Most of the studied two-dimensional (2D) materials are based on highly symmetric hexagonal structural motifs. In contrast, lower-symmetry structures may have exciting anisotropic properties leading to various applications in nanoelectronics. In this work we report the synthesis of nickel diazenide NiN2 which possesses atomic-thick layers comprised of Ni2N3 pentagons forming Cairo-type tessellation. The layers of NiN2 are weakly bonded with the calculated exfoliation energy of 0.72 J/m2, which is just slightly larger than that of graphene. The compound crystallizes in the space group of the ideal Cairo tiling (P4/mbm) and possesses significant anisotropy of elastic properties. The single-layer NiN2 is a direct-band-gap semiconductor, while the bulk material is metallic. Furthermore, this indicates the promise of NiN2 to be a precursor of a pentagonal 2D material with a tunable direct band gap.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- National Science Foundation; USDOE Office of Science (SC)
- Grant/Contract Number:
- AC02-06CH11357; FG02-94ER14466
- OSTI ID:
- 1817864
- Journal Information:
- ACS Nano, Journal Name: ACS Nano Journal Issue: 8 Vol. 15; ISSN 1936-0851
- Publisher:
- American Chemical Society (ACS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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