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Title: Coherent Hopping Transport and Giant Negative Magnetoresistance in Epitaxial CsSnBr3

Journal Article · · ACS Applied Electronic Materials
 [1];  [1];  [2];  [1];  [3]; ORCiD logo [1]; ORCiD logo [1]
  1. Michigan State Univ., East Lansing, MI (United States)
  2. Michigan State Univ., East Lansing, MI (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. The Ohio State Univ., Columbus, OH (United States)

Single-crystal inorganic halide perovskites are attracting interest for quantum device applications. Here we present low-temperature quantum magnetotransport measurements on thin film devices of epitaxial single-crystal CsSnBr3, which exhibit two-dimensional Mott variable range hopping (VRH) and giant negative magnetoresistance. These findings are described by a model for quantum interference between different directed hopping paths, and we extract the temperature-dependent hopping length of charge carriers, their localization length, and a lower bound for their phase coherence length of ~100 nm at low temperatures. These observations demonstrate that epitaxial halide perovskite devices are emerging as a material class for low-dimensional quantum coherent transport devices.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE
Grant/Contract Number:
AC05-00OR22725; DMR-2011876; DMR-1807573
OSTI ID:
1817461
Journal Information:
ACS Applied Electronic Materials, Vol. 3, Issue 7; ISSN 2637-6113
Publisher:
ACS PublicationsCopyright Statement
Country of Publication:
United States
Language:
English

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