Coherent Hopping Transport and Giant Negative Magnetoresistance in Epitaxial CsSnBr3
- Michigan State Univ., East Lansing, MI (United States)
- Michigan State Univ., East Lansing, MI (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- The Ohio State Univ., Columbus, OH (United States)
Single-crystal inorganic halide perovskites are attracting interest for quantum device applications. Here we present low-temperature quantum magnetotransport measurements on thin film devices of epitaxial single-crystal CsSnBr3, which exhibit two-dimensional Mott variable range hopping (VRH) and giant negative magnetoresistance. These findings are described by a model for quantum interference between different directed hopping paths, and we extract the temperature-dependent hopping length of charge carriers, their localization length, and a lower bound for their phase coherence length of ~100 nm at low temperatures. These observations demonstrate that epitaxial halide perovskite devices are emerging as a material class for low-dimensional quantum coherent transport devices.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- AC05-00OR22725; DMR-2011876; DMR-1807573
- OSTI ID:
- 1817461
- Journal Information:
- ACS Applied Electronic Materials, Vol. 3, Issue 7; ISSN 2637-6113
- Publisher:
- ACS PublicationsCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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