Phase‐Change‐Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb 2 Te 3

Wang, Xue‐Peng; Li, Xian‐Bin; Chen, Nian‐Ke; Chen, Bin; Rao, Feng; Zhang, Shengbai

doi:10.1002/advs.202004185

Phase‐Change‐Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb ₂ Te ₃

Journal Article · Fri May 14 00:00:00 EDT 2021 · Advanced Science

DOI:https://doi.org/10.1002/advs.202004185· OSTI ID:1782961

^[1]; ^[1]; ^[1]; Chen, Bin ^[2]; ^[2]; Zhang, Shengbai ^[3]

State Key Laboratory of Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 China
College of Materials Science and Engineering Shenzhen University Shenzhen 518060 China
Department of Physics, Applied Physics, and Astronomy Rensselaer Polytechnic Institute Troy NY 12180 USA

Abstract

One central task of developing nonvolatile phase change memory (PCM) is to improve its scalability for high‐density data integration. In this work, by first‐principles molecular dynamics, to date the thinnest PCM material possible (0.8 nm), namely, a monolayer Sb ₂ Te ₃ , is proposed. Importantly, its SET (crystallization) process is a fast one‐step transition from amorphous to hexagonal phase without the usual intermediate cubic phase. An increased spatial localization of electrons due to geometrical confinement is found to be beneficial for keeping the data nonvolatile in the amorphous phase at the 2D limit. The substrate and superstrate can be utilized to control the phase change behavior: e.g., with passivated SiO ₂ (001) surfaces or hexagonal Boron Nitride, the monolayer Sb ₂ Te ₃ can reach SET recrystallization in 0.54 ns or even as fast as 0.12 ns, but with unpassivated SiO ₂ (001), this would not be possible. Besides, working with small volume PCM materials is also a natural way to lower power consumption. Therefore, the proposed PCM working process at the 2D limit will be an important potential strategy of scaling the current PCM materials for ultrahigh‐density data storage.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: SC0002623

OSTI ID:: 1782961

Alternate ID(s):: OSTI ID: 1816936
OSTI ID: 1782962

Journal Information:: Advanced Science, Journal Name: Advanced Science Journal Issue: 13 Vol. 8; ISSN 2198-3844

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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