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Domain wall diode based on functionally graded Dzyaloshinskii–Moriya interaction

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/5.0010107· OSTI ID:1814779
 [1];  [2];  [3];  [4];  [5]
  1. National Academy of Sciences of Ukraine (NASU), Kiev (Ukraine); Leibniz Inst. for Solid State and Materials Research (IFW), Dresden (Germany)
  2. National Academy of Sciences of Ukraine (NASU), Kiev (Ukraine); Karlsruhe Inst. of Technology (KIT) (Germany)
  3. Taras Shevchenko National Univ. of Kyiv (Ukraine)
  4. Leibniz Inst. for Solid State and Materials Research (IFW), Dresden (Germany); Dresden Univ. of Technology (Germany)
  5. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
In this work, we present a general approach for studying the dynamics of domain walls in biaxial ferromagnetic stripes with functionally graded Dzyaloshinskii–Moriya interaction (DMI). By engineering the spatial profile of the DMI parameter we propose the concept of a diode, which implements filtering of domain walls of certain topological charge and helicity. We base our study on phenomenological Landau–Lifshitz–Gilbert equations with additional Zhang–Li spin-transfer terms using a collective variable approach. In the effective equations of motion the gradients of DMI play the role of a driving force which competes with current driving. All analytical predictions are confirmed by numerical simulations.
Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Organization:
German Federal Ministry of Education and Research (BMBF); German Research Foundation (DFG); National Academy of Sciences of Ukraine; Taras Shevchenko National Univ. of Kyiv; USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
89233218CNA000001
OSTI ID:
1814779
Report Number(s):
LA-UR--20-22584
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 116; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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