High thermoelectric figure of merit of porous Si nanowires from 300 to 700 K.

Yang, Lin; Huh, Daihong; Ning, Rui; Rapp, Vi; Zeng, Yuqiang; Liu, Yunzhi; Ju, Sucheol; Tao, Yi; Jiang, Yue; Beak, Jihyun; Leem, Juyoung; Kaur, Sumanjeet; Lee, Heon; Zheng, Xiaolin; Prasher, Ravi S.

doi:10.1038/s41467-021-24208-3

High thermoelectric figure of merit of porous Si nanowires from 300 to 700 K.

Journal Article · Thu Jun 24 00:00:00 EDT 2021 · Nature Communications

DOI:https://doi.org/10.1038/s41467-021-24208-3· OSTI ID:1813792

Yang, Lin ^[1]; Huh, Daihong ^[2]; Ning, Rui ^[3]; Rapp, Vi ^[1]; Zeng, Yuqiang ^[1]; Liu, Yunzhi ^[3]; Ju, Sucheol ^[4]; Tao, Yi ^[5]; Jiang, Yue ^[3]; Beak, Jihyun ^[3]; Leem, Juyoung ^[3]; Kaur, Sumanjeet ^[1]; Lee, Heon ^[4]; Zheng, Xiaolin ^[3]; Prasher, Ravi S. ^[6]

Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Energy Technology Area
Stanford Univ., CA (United States); Korea Univ., Seoul, (South Korea)
Stanford Univ., CA (United States)
Korea Univ., Seoul, (South Korea)
Vanderbilt Univ., Nashville, TN (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Energy Technology Area; Univ. of California, Berkeley, CA (United States)

Thermoelectrics operating at high temperature can cost-effectively convert waste heat and compete with other zero-carbon technologies. Among different high-temperature thermoelectrics materials, silicon nanowires possess the combined attributes of cost effectiveness and mature manufacturing infrastructures. Despite significant breakthroughs in silicon nanowires based thermoelectrics for waste heat conversion, the figure of merit (ZT) or operating temperature has remained low. Here, we report the synthesis of large-area, wafer-scale arrays of porous silicon nanowires with ultra-thin Si crystallite size of ~4 nm. Concurrent measurements of thermal conductivity (κ), electrical conductivity (σ), and Seebeck coefficient (S) on the same nanowire show a ZT of 0.71 at 700 K, which is more than ~18 times higher than bulk Si. This ZT value is more than two times higher than any nanostructured Si-based thermoelectrics reported in the literature at 700 K. Experimental data and theoretical modeling demonstrate that this work has the potential to achieve a ZT of ~1 at 1000 K.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: California Energy Commission; National Science Foundation (NSF); USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1813792

Journal Information:: Nature Communications, Journal Name: Nature Communications Journal Issue: 1 Vol. 12; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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