Chemical Passivation of Crystalline Si by Al2O3 Deposited Using Atomic Layer Deposition: Implications for Solar Cells

Meyer, Abigail R.; Chaukulkar, Rohan P.; Leick, Noemi; Nemeth, William; Young, David L.; Stradins, Paul; Agarwal, Sumit

doi:10.1021/acsanm.1c00448

Chemical Passivation of Crystalline Si by Al₂O₃ Deposited Using Atomic Layer Deposition: Implications for Solar Cells

Journal Article · Tue Jun 22 00:00:00 UTC 2021 · ACS Applied Nano Materials

DOI:https://doi.org/10.1021/acsanm.1c00448· OSTI ID:1812331

^[1]; Chaukulkar, Rohan P. ^[1]; ^[2]; Nemeth, William ^[2]; Young, David L. ^[2]; Stradins, Paul ^[2]; ^[1]

Colorado School of Mines, Golden, CO (United States)
National Renewable Energy Lab. (NREL), Golden, CO (United States)

The atomistic-level mechanism for the chemical passivation of the monocrystalline Si (c-Si) surface with thermally annealed Al₂O₃ was studied using in situ infrared spectroscopy and photoconductance decay measurements. Al₂O₃ was deposited on high-lifetime, float-zone c-Si substrates using atomic layer deposition (ALD) from trimethylaluminum (TMA), and H₂O or O₃. Surface-sensitive attenuated total reflection Fourier transform infrared spectroscopy was used to monitor the c-Si/Al₂O₃ interface, as well as the bulk of the Al₂O₃ film during the entire process. Our results show that some surface Si–H bonds are preserved after the ALD of Al₂O₃ on H-terminated Si. During the annealing step at 400 °C, restructuring occurs at the c-Si/Al₂O₃ interface to form interfacial SiO_x. Isotope labeling was used to differentiate interfacial SiD bonds on the c-Si surface from H incorporated in Al₂O₃. Within the sensitivity of our infrared setup (~10¹³ cm^–2), we did not observe any net migration of atomic H or D from Al₂O₃ to the c-Si/Al₂O₃ interface. To isolate the effects of chemical and field-effect passivation of Al₂O₃ thin films, we carried out surface passivation studies on c-Si/SiO₂/Al₂O₃ stacks. We also annealed these stacks in different atmospheres to test the influence of annealing atmospheres on the chemical passivation of c-Si by Al₂O₃ and observed that O₂-containing atmosphere led to the best surface chemical passivation.

View Accepted Manuscript (DOE)

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1812331

Report Number(s):: NREL/JA--5900-80036; MainId:42239; UUID:cc7540e5-ebcb-4bee-a274-623e2cc5a3f1; MainAdminID:48418

Journal Information:: ACS Applied Nano Materials, Journal Name: ACS Applied Nano Materials Journal Issue: 7 Vol. 4; ISSN 2574-0970

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Chemical Passivation of Crystalline Si by Al2O3 Deposited Using Atomic Layer Deposition: Implications for Solar Cells

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