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Semiconductor quantum dots: Technological progress and future challenges

Journal Article · · Science
 [1];  [2];  [3];  [4];  [5];  [6]
  1. Department of Electrical and Computer Engineering, University of Toronto, 35 St. George Street, Toronto, ON M5S 1A4, Canada., ICFO–Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Barcelona 08860, Spain.
  2. Department of Chemistry, University of Chicago, Chicago, IL 60637, USA.
  3. Chemistry Division, C-PCS, Los Alamos National Laboratory, Los Alamos, NM 87545, USA.
  4. University of Tokyo, Meguro, Tokyo 153-8505, Japan.
  5. Technische Universitat Dortmund, 44221 Dortmund, Germany.
  6. Department of Electrical and Computer Engineering, University of Toronto, 35 St. George Street, Toronto, ON M5S 1A4, Canada.

In quantum-confined semiconductor nanostructures, electrons exhibit distinctive behavior compared with that in bulk solids. This enables the design of materials with tunable chemical, physical, electrical, and optical properties. Zero-dimensional semiconductor quantum dots (QDs) offer strong light absorption and bright narrowband emission across the visible and infrared wavelengths and have been engineered to exhibit optical gain and lasing. These properties are of interest for imaging, solar energy harvesting, displays, and communications. Here, we offer an overview of advances in the synthesis and understanding of QD nanomaterials, with a focus on colloidal QDs, and discuss their prospects in technologies such as displays and lighting, lasers, sensing, electronics, solar energy conversion, photocatalysis, and quantum information.

Sponsoring Organization:
USDOE
Grant/Contract Number:
AC02-06CH11357
OSTI ID:
1812116
Journal Information:
Science, Journal Name: Science Journal Issue: 6555 Vol. 373; ISSN 0036-8075
Publisher:
American Association for the Advancement of Science (AAAS)Copyright Statement
Country of Publication:
United States
Language:
English

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