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Impact of 2D–3D Heterointerface on Remote Epitaxial Interaction through Graphene

Journal Article · · ACS Nano
 [1];  [2];  [2];  [2];  [2];  [2];  [2];  [2];  [3];  [3];  [4];  [5];  [6];  [2];  [7];  [8];  [8];  [9];  [6];  [3] more »;  [10];  [2] « less
  1. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Massachusetts Institute of Technology
  2. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  3. Sungkyunkwan Univ., Suwon (Republic of Korea)
  4. Cornell Univ., Ithaca, NY (United States)
  5. Cornell Univ., Ithaca, NY (United States); Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY (United States)
  6. Yonsei Univ., Seoul (Korea, Republic of)
  7. Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)
  8. Pennsylvania State Univ., University Park, PA (United States)
  9. Ajou Univ., Suwon (Korea, Republic of)
  10. Cornell Univ., Ithaca, NY (United States); Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY (United States); Leibniz Inst. for Crystal Growth (IKZ), Berlin (Germany)
+ Show Author Affiliations
Remote epitaxy has drawn attention as it offers epitaxy of functional materials that can be released from the substrates with atomic precision, thus enabling production and heterointegration of flexible, transferrable, and stackable freestanding single-crystalline membranes. In addition, the remote interaction of atoms and adatoms through two-dimensional (2D) materials in remote epitaxy allows investigating and utilizing electrical/chemical/physical coupling of bulk (3D) materials via 2D materials (3D-2D-3D coupling). Here, we unveil the respective roles and impacts of the substrate material, graphene, substrate-graphene interface, and epitaxial material for electrostatic coupling of these materials, which governs cohesive ordering and can lead to single-crystal epitaxy in the overlying film. Further, we show that simply coating a graphene layer on wafers does not guarantee successful implementation of remote epitaxy, since atomically precise control of the graphene-coated interface is required, and provide key considerations for maximizing the remote electrostatic interaction between the substrate and adatoms. This was enabled by exploring various material systems and processing conditions, and we demonstrate that the rules of remote epitaxy vary significantly depending on the ionicity of material systems as well as the graphene-substrate interface and the epitaxy environment. The general rule of thumb discovered here enables expanding 3D material libraries that can be stacked in freestanding form.
Research Organization:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Organization:
Defense Advanced Research Projects Agency (DARPA); National Science Foundation (NSF); US Air Force Office of Scientific Research (AFOSR); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
Grant/Contract Number:
EE0008558
OSTI ID:
1811213
Journal Information:
ACS Nano, Journal Name: ACS Nano Journal Issue: 6 Vol. 15; ISSN 1936-0851
Publisher:
American Chemical Society (ACS)Copyright Statement
Country of Publication:
United States
Language:
English

References (41)

Graphoepitaxy of High-Quality GaN Layers on Graphene/6H-SiC journal December 2014
Probing Layer Number and Stacking Order of Few-Layer Graphene by Raman Spectroscopy journal January 2010
Lattice Structure and Bandgap Control of 2D GaN Grown on Graphene/Si Heterostructures journal February 2019
Simultaneous N-intercalation and N-doping of epitaxial graphene on 6H-SiC(0001) through thermal reactions with ammonia journal April 2013
Epitaxial growth of large-area single-layer graphene over Cu(111)/sapphire by atmospheric pressure CVD journal January 2012
Impermeability of graphene and its applications journal October 2013
Electronegativity scales and electronegativity-bond ionicity relations: A comparative study journal January 2019
Synthesis, characterization and prospective applications of nitrogen-doped graphene: A short review journal June 2017
Role of Graphene in Water-Assisted Oxidation of Copper in Relation to Dry Transfer of Graphene journal May 2017
A Reconfigurable Remotely Epitaxial VO 2 Electrical Heterostructure journal November 2019
High-Quality Uniform Dry Transfer of Graphene to Polymers journal December 2011
Impermeable Atomic Membranes from Graphene Sheets journal August 2008
Transfer of CVD-Grown Monolayer Graphene onto Arbitrary Substrates journal August 2011
Remote epitaxy through graphene enables two-dimensional material-based layer transfer journal April 2017
Two-dimensional gallium nitride realized via graphene encapsulation journal August 2016
Roll-to-roll production of 30-inch graphene films for transparent electrodes journal June 2010
Raman spectroscopy as a versatile tool for studying the properties of graphene journal April 2013
Carrier lifetime enhancement in halide perovskite via remote epitaxy journal September 2019
Polarity governs atomic interaction through two-dimensional materials journal October 2018
Path towards graphene commercialization from lab to market journal October 2019
Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxy journal February 2020
Heterogeneous integration of single-crystalline complex-oxide membranes journal February 2020
Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices journal October 2019
Growth mechanism of AlN on hexagonal BN/sapphire substrate by metal–organic chemical vapor deposition journal January 2017
Remote heteroepitaxy of atomic layered hafnium disulfide on sapphire through hexagonal boron nitride journal January 2019
Damage-free separation of GaN thin films from sapphire substrates journal February 1998
Remote heteroepitaxy across graphene: Hydrothermal growth of vertical ZnO microrods on graphene-coated GaN substrate journal December 2018
Extreme selectivity in the lift‐off of epitaxial GaAs films journal December 1987
Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting journal June 2011
Unveiling the carrier transport mechanism in epitaxial graphene for forming wafer-scale, single-domain graphene journal April 2017
Ionicity in solids journal August 1983
Layer transfer by controlled spalling journal March 2013
Localized and delocalized models in the theory of polarization: perovskite oxides journal March 1998
Titanium carbide/carbon composite nanofibers prepared by a plasma process journal October 2010
Remote epitaxy using graphene enables growth of stress-free GaN journal October 2019
Ionicity of the Chemical Bond in Crystals journal July 1970
Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle journal June 2020
Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices journal October 2010
Layer-Resolved Graphene Transfer via Engineered Strain Layers journal October 2013
Wafer-Scale Growth of Single-Crystal Monolayer Graphene on Reusable Hydrogen-Terminated Germanium journal April 2014
Radio-frequency plasma-excited molecular beam epitaxy growth of GaN on graphene/Si(100) substrates journal June 2014

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Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
graphene
heterointegration
ionicity
remote epitaxy
single-crystal membrane
transfer process