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Elucidating the Influence of Residual Polymer and Gas Environment on the Electronic Structure of a Graphene Layer Using in Situ APXPS

Journal Article · · Applied Surface Science
 [1];  [2];  [3];  [4];  [4];  [4];  [4];  [4];  [4];  [4];  [5]
  1. Samsung Advanced Institute of Technology, Suwon (South Korea); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  2. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Basque Research and Technology Alliance, Vitoria-Gasteiz (Spain); Universidad del País Vasco, Bilbao (Spain)
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Basque Research and Technology Alliance, Vitoria-Gasteiz (Spain)
  4. Samsung Advanced Institute of Technology, Suwon (South Korea)
  5. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
We use in situ ambient pressure X-ray photoelectron spectroscopy (APXPS) and ultraviolet photoelectron spectroscopy (UPS) to develop an effective method for studying changes in the graphene (Gr) electronic structure according to certain circumstance. The amount of polymethyl methacrylate (PMMA) residual polymer (RP), inevitably generated during the Gr transfer process, is significantly reduced from Gr surface by thermal annealing. This processed Gr is then sequentially exposed to specific gas environments (Ar, N2, O2, and CO2), and APXPS or UPS is carried out to investigate the variations in the Gr electronic structure including the work function. When the amount of PMMA RP on Gr is reduced, the position of the main carbon peak shifts by more than 0.4 eV to a higher binding energy (in XPS spectra), and the secondary electron cutoff moves by about 0.2 eV to a lower binding energy (in UPS spectra). These changes are generally caused by a decrease in the Gr work function. On the other hand, exposure to the gas environments at different temperatures that we investigated did not produce significant changes in the work function and chemical states of Gr. These results confirm that the material in contact with Gr should be considered to achieve the desired Gr performance in electronics.
Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC02-05CH11231
OSTI ID:
1841713
Alternate ID(s):
OSTI ID: 1810992
Journal Information:
Applied Surface Science, Journal Name: Applied Surface Science Vol. 528; ISSN 0169-4332
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English

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