Unraveling the Atomic Structure of Bulk Binary Ga–Te Glasses with Surprising Nanotectonic Features for Phase-Change Memory Applications

Bokova, Maria; Tverjanovich, Andrey; Benmore, Chris J.; Fontanari, Daniele; Sokolov, Anton; Khomenko, Maxim; Kassem, Mohammad; Ozheredov, Ilya; Bychkov, Eugene

doi:10.1021/acsami.1c09070

Title: Unraveling the Atomic Structure of Bulk Binary Ga–Te Glasses with Surprising Nanotectonic Features for Phase-Change Memory Applications

Journal Article · Wed Jul 28 00:00:00 EDT 2021 · ACS Applied Materials and Interfaces

DOI:https://doi.org/10.1021/acsami.1c09070· OSTI ID:1810592

Bokova, Maria ^[1]; Tverjanovich, Andrey ^[2];

^[3]; Fontanari, Daniele ^[1]; Sokolov, Anton ^[4]; Khomenko, Maxim ^[5];

^[1]; Ozheredov, Ilya ^[5];

^[4]

Laboratoire de Physico-Chimie de l’Atmosphère, Université du Littoral Côte d’Opale, 59140 Dunkerque, France
Institute of Chemistry, St. Petersburg State University, 198504 St. Petersburg, Russia
X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, United States
Laboratoire de Physico-Chimie de l’Atmosphère, Université du Littoral Côte d’Opale, 59140 Dunkerque, France, ILIT RAS−Branch of the FSRC “Crystallography and Photonics” RAS, 140700 Shatura, Moscow Region, Russia
ILIT RAS−Branch of the FSRC “Crystallography and Photonics” RAS, 140700 Shatura, Moscow Region, Russia

Binary Ge-Te and ternary Ge-Sb-Te systems belong to flagship phase-change materials (PCMs) and are used in nonvolatile memory applications and neuromorphic computing. The working temperatures of these PCMs are limited by low-T glass transition and crystallization phenomena. Promising high-T PCMs may include gallium tellurides; however, the atomic structure and transformation processes for amorphous Ga-Te binaries are simply missing. Using high-energy X-ray diffraction and Raman spectroscopy supported by first-principles simulations, we elucidate the short- and intermediate-range order in bulk glassy Ga_xTe_1-x, 0.17 ≤ x ≤ 0.25, following their thermal, electric, and optical properties, revealing a semiconductor-metal transition above melting. We also show that a phase change in binary Ga-Te is characterized by a very unusual nanotectonic compression with the high internal transition pressure reaching 4-8 GPa, which appears to be beneficial for PCM applications increasing optical and electrical contrast between the SET and RESET states and decreasing power consumption.

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-06CH1135; AC02-06CH11357

OSTI ID:: 1810592

Alternate ID(s):: OSTI ID: 1828848

Journal Information:: ACS Applied Materials and Interfaces, Journal Name: ACS Applied Materials and Interfaces Vol. 13 Journal Issue: 31; ISSN 1944-8244

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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