Large-scale integration of artificial atoms in hybrid photonic circuits

Wan, Noel H.; Lu, Tsung-Ju; Chen, Kevin C.; Walsh, Michael P.; Trusheim, Matthew E.; De Santis, Lorenzo; Bersin, Eric A.; Harris, Isaac B.; Mouradian, Sara L.; Christen, Ian R.; Bielejec, Edward S.; Englund, Dirk

doi:10.1038/s41586-020-2441-3

Title: Large-scale integration of artificial atoms in hybrid photonic circuits

Journal Article · Wed Jul 08 00:00:00 EDT 2020 · Nature (London)

DOI:https://doi.org/10.1038/s41586-020-2441-3· OSTI ID:1810391

^[1];

^[1]; Chen, Kevin C. ^[1];

^[1]; Trusheim, Matthew E. ^[1]; De Santis, Lorenzo ^[1]; Bersin, Eric A. ^[1]; Harris, Isaac B. ^[1]; Mouradian, Sara L. ^[1]; Christen, Ian R. ^[1]; Bielejec, Edward S. ^[2];

^[1]

Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Research Laboratory of Electronics
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

A central challenge in developing quantum computers and long-range quantum networks is the distribution of entanglement across many individually controllable qubits. Colour centres in diamond have emerged as leading solid-state ‘artificial atom’ qubits because they enable on-demand remote entanglement, coherent control of over ten ancillae qubits with minute-long coherence times and memory-enhanced quantum communication. A critical next step is to integrate large numbers of artificial atoms with photonic architectures to enable large-scale quantum information processing systems. So far, these efforts have been stymied by qubit inhomogeneities, low device yield and complex device requirements. Here we introduce a process for the high-yield heterogeneous integration of ‘quantum microchiplets’—diamond waveguide arrays containing highly coherent colour centres—on a photonic integrated circuit (PIC). We use this process to realize a 128-channel, defect-free array of germanium-vacancy and silicon-vacancy colour centres in an aluminium nitride PIC. Photoluminescence spectroscopy reveals long-term, stable and narrow average optical linewidths of 54 megahertz (146 megahertz) for germanium-vacancy (silicon-vacancy) emitters, close to the lifetime-limited linewidth of 32 megahertz (93 megahertz). We show that inhomogeneities of individual colour centre optical transitions can be compensated in situ by integrated tuning over 50 gigahertz without linewidth degradation. The ability to assemble large numbers of nearly indistinguishable and tunable artificial atoms into phase-stable PICs marks a key step towards multiplexed quantum repeaters and general-purpose quantum processors

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); Army Research Laboratory (ARL); USDOD

Grant/Contract Number:: AC04-94AL85000; NA0003525; SC0019140; W911NF-15-2-0067; DMR-1747426; EFMA-1641064; PHY-1734011; DMR-1231319; FA8750-16-2-0141

OSTI ID:: 1810391

Report Number(s):: SAND-2021-2883J; 697265; TRN: US2213035

Journal Information:: Nature (London), Vol. 583, Issue 7815; ISSN 0028-0836

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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