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Title: Self-biased magnetoelectric switching at room temperature in three-phase ferroelectric–antiferromagnetic–ferrimagnetic nanocomposites

Journal Article · · Nature Electronics
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [3]; ORCiD logo [4];  [5];  [2];  [6];  [7];  [7];  [1];  [5];  [1];  [1];  [8];  [9];  [6]; ORCiD logo [6];  [10]; ORCiD logo [7];  [5] more »; ORCiD logo [2]; ORCiD logo [1] « less
  1. Univ. of Cambridge (United Kingdom)
  2. Purdue Univ., West Lafayette, IN (United States)
  3. Univ. of Cambridge (United Kingdom); Indian Institute of Science Education and Research Thiruvananthapuram, Thiruvananthapuram (India)
  4. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  5. Peking Univ., Beijing (China)
  6. Xi'an Jiaotong Univ., Shaanxi (China)
  7. State Univ. of New York (SUNY), Buffalo, NY (United States)
  8. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  9. University of Science and Technology Beijing (China)
  10. Xiamen Univ. (China)

Magnetoelectric systems could be used to develop magnetoelectric random access memory and microsensor devices. One promising system is the two-phase 3-1-type multiferroic nanocomposite in which a one-dimensional magnetic column is embedded in a three-dimensional ferroelectric matrix. However, it suffers from a number of limitations including unwanted leakage currents and the need for biasing with a magnetic field. Here we show that the addition of an antiferromagnet to a 3-1-type multiferroic nanocomposite can lead to a large, self-biased magnetoelectric effect at room temperature. Our three-phase system is composed of a ferroelectric Na0.5Bi0.5TiO3 matrix in which ferrimagnetic NiFe2O4 nanocolumns coated with antiferromagnetic p-type NiO are embedded. This system, which is self-assembled, exhibits a magnetoelectric coefficient of up to 1.38 × 10–9 s m–1, which is large enough to switch the magnetic anisotropy from the easy axis (Keff = 0.91 × 104 J m–3) to the easy plane (Keff = –1.65 × 104 J m–3).

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA); Leverhulme Trust; Engineering and Physical Sciences Research Council (EPSRC); Royal Academy of Engineering Chair in Emerging Technologies; European Union (EU); Isaac Newton Trust; National Key Research and Development Program of China; National Natural Science Foundation of China (NSF); National Science Foundation (NSF); US Department of the Navy, Office of Naval Research (ONR)
Grant/Contract Number:
AC04-94AL85000; RPG-2015-017; EP/N004272/1; EP/M000524/1; CiET1819\24; H2020-MSCA-IF-2016; RG96474; 2017YFA0206303; 11975035; 51731001; ECCS-1902644; ECCS-1902623; N00014-20-1-2043; EP/T012218/1; 89233218CNA000001
OSTI ID:
1810362
Report Number(s):
SAND-2021-8243J; 697213
Journal Information:
Nature Electronics, Vol. 4, Issue 5; ISSN 2520-1131
Publisher:
Springer NatureCopyright Statement
Country of Publication:
United States
Language:
English

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