Self-biased magnetoelectric switching at room temperature in three-phase ferroelectric–antiferromagnetic–ferrimagnetic nanocomposites
Journal Article
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· Nature Electronics
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- Univ. of Cambridge (United Kingdom)
- Purdue Univ., West Lafayette, IN (United States)
- Univ. of Cambridge (United Kingdom); Indian Institute of Science Education and Research Thiruvananthapuram, Thiruvananthapuram (India)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Peking Univ., Beijing (China)
- Xi'an Jiaotong Univ., Shaanxi (China)
- State Univ. of New York (SUNY), Buffalo, NY (United States)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- University of Science and Technology Beijing (China)
- Xiamen Univ. (China)
Magnetoelectric systems could be used to develop magnetoelectric random access memory and microsensor devices. One promising system is the two-phase 3-1-type multiferroic nanocomposite in which a one-dimensional magnetic column is embedded in a three-dimensional ferroelectric matrix. However, it suffers from a number of limitations including unwanted leakage currents and the need for biasing with a magnetic field. Here we show that the addition of an antiferromagnet to a 3-1-type multiferroic nanocomposite can lead to a large, self-biased magnetoelectric effect at room temperature. Our three-phase system is composed of a ferroelectric Na0.5Bi0.5TiO3 matrix in which ferrimagnetic NiFe2O4 nanocolumns coated with antiferromagnetic p-type NiO are embedded. This system, which is self-assembled, exhibits a magnetoelectric coefficient of up to 1.38 × 10–9 s m–1, which is large enough to switch the magnetic anisotropy from the easy axis (Keff = 0.91 × 104 J m–3) to the easy plane (Keff = –1.65 × 104 J m–3).
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- Engineering and Physical Sciences Research Council (EPSRC); European Union (EU); Isaac Newton Trust; Leverhulme Trust; National Key R&D Program of China; National Natural Science Foundation of China (NSF); National Science Foundation (NSF); Royal Academy of Engineering Chair in Emerging Technologies; US Department of the Navy, Office of Naval Research (ONR); USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- 89233218CNA000001; AC04-94AL85000
- OSTI ID:
- 1810362
- Report Number(s):
- SAND--2021-8243J; 697213
- Journal Information:
- Nature Electronics, Journal Name: Nature Electronics Journal Issue: 5 Vol. 4; ISSN 2520-1131
- Publisher:
- Springer NatureCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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