Interface Carriers and Enhanced Electron-Phonon Coupling Effect in Al2O3/TiO2 Heterostructure Revealed by Resonant Inelastic Soft X-Ray Scattering

Shao, Yu‐Cheng; Kuo, Cheng‐Tai; Feng, Xuefei; Chuang, Yi‐De; Seok, Tae Jun; Choi, Ji Hyeon; Park, Tae Joo; Cho, Deok‐Yong

doi:10.1002/adfm.202104430

Title: Interface Carriers and Enhanced Electron-Phonon Coupling Effect in Al₂O₃/TiO₂ Heterostructure Revealed by Resonant Inelastic Soft X-Ray Scattering

Journal Article · Sun Jun 20 00:00:00 EDT 2021 · Advanced Functional Materials

DOI:https://doi.org/10.1002/adfm.202104430· OSTI ID:1807543

Shao, Yu‐Cheng ^[1];

^[2];

^[1];

^[1]; Seok, Tae Jun ^[3]; Choi, Ji Hyeon ^[3];

^[3];

^[4]

Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Synchrotron Radiation Lightsource (SSRL)
Hanyang Univ., Ansan (Korea)
Jeonbuk National Univ., Jeonju (Korea)

The electronic structure and the electron-phonon couplings in a novel mass-production-compatible Al₂O₃/TiO₂ 2D electron system (2DES) are investigated using resonant inelastic soft X-ray scattering. The experimental data from the samples of various TiO₂ thicknesses unequivocally show that the Ti³⁺ state indeed exists at the deep interface to serve as an n-type dopant for the 2DES. Here, the electronic structure of Ti³⁺ species is scrutinized as entirely separated from that of the Ti⁴⁺ host lattice. Furthermore, features of sub-eV energy loss phonon modes are clearly observed, indicating substantial electron-phonon coupling effects. Such low energy loss features are enhanced in thinner TiO₂ samples, implying that polaronic local lattice deformation is enhanced due to the presence of Ti³⁺. These findings suggest that the 2DES properties can be controlled via well-established TiO₂ engineering, thereby enthroning the binary oxide heterostructure as a promising candidate for 2DES device applications.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); Basic Science Research Program

Grant/Contract Number:: AC02-05CH11231; AC02-76SF00515; 2018R1D1A1B07043427

OSTI ID:: 1807543

Alternate ID(s):: OSTI ID: 1797842; OSTI ID: 1804881

Journal Information:: Advanced Functional Materials, Vol. 31, Issue 35; ISSN 1616-301X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Interface Carriers and Enhanced Electron-Phonon Coupling Effect in Al2O3/TiO2 Heterostructure Revealed by Resonant Inelastic Soft X-Ray Scattering

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Title: Interface Carriers and Enhanced Electron-Phonon Coupling Effect in Al₂O₃/TiO₂ Heterostructure Revealed by Resonant Inelastic Soft X-Ray Scattering