Hard-Switching Reliability Studies of 1200 V Vertical GaN PiN Diodes.

Slobodyan, Oleksiy; Smith, Trevor; Flicker, Jack David; Sandoval, Stephanie; Matthews, Chris; Van Heukelom, Michael; Kaplar, Robert; Atcitty, Stanley

doi:10.1557/mrc.2018.204

Title: Hard-Switching Reliability Studies of 1200 V Vertical GaN PiN Diodes.

Conference · Sun Jul 01 00:00:00 EDT 2018

DOI:https://doi.org/10.1557/mrc.2018.204· OSTI ID:1806631

Slobodyan, Oleksiy; Smith, Trevor; Flicker, Jack David; Sandoval, Stephanie; Matthews, Chris; Van Heukelom, Michael; Kaplar, Robert; Atcitty, Stanley

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Electricity (OE), Advanced Grid Research & Development. Power Systems Engineering Research

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 1806631

Report Number(s):: SAND2018-7796C; 665879

Resource Relation:: Journal Volume: 8; Journal Issue: 4; Conference: Proposed for presentation at the 2018 Power Electronics Workshop held July 17-18, 2018 in Albuquerque, NM, U.S.A..

Country of Publication:: United States

Language:: English

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A Survey of Wide Bandgap Power Semiconductor Devices Millan, Jose; Godignon, Philippe; Perpina, Xavier IEEE Transactions on Power Electronics, Vol. 29, Issue 5 https://doi.org/10.1109/TPEL.2013.2268900	journal	May 2014
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges Tsao, J. Y.; Chowdhury, S.; Hollis, M. A. Advanced Electronic Materials, Vol. 4, Issue 1 https://doi.org/10.1002/aelm.201600501	journal	December 2017
An assessment of wide bandgap semiconductors for power devices Hudgins, J. L.; Simin, G. S.; Santi, E. IEEE Transactions on Power Electronics, Vol. 18, Issue 3 https://doi.org/10.1109/TPEL.2003.810840	journal	May 2003
Fundamentals of Power Semiconductor Devices Baliga, B. Jayant https://doi.org/10.1007/978-0-387-47314-7	book	January 2008
Vertical GaN Power Diodes With a Bilayer Edge Termination Dickerson, Jeramy R.; Allerman, Andrew A.; Bryant, Benjamin N. IEEE Transactions on Electron Devices, Vol. 63, Issue 1, p. 419-425 https://doi.org/10.1109/TED.2015.2502186	journal	January 2016
Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges Jones, Edward A.; Wang, Fei Fred; Costinett, Daniel IEEE Journal of Emerging and Selected Topics in Power Electronics, Vol. 4, Issue 3 https://doi.org/10.1109/JESTPE.2016.2582685	journal	September 2016
High Voltage Vertical GaN p-n Diodes With Avalanche Capability Kizilyalli, Isik C.; Edwards, Andrew P.; Nie, Hui IEEE Transactions on Electron Devices, Vol. 60, Issue 10 https://doi.org/10.1109/TED.2013.2266664	journal	October 2013
3.7 kV Vertical GaN PN Diodes Kizilyalli, Isik C.; Edwards, Andrew P.; Nie, Hui IEEE Electron Device Letters, Vol. 35, Issue 2 https://doi.org/10.1109/LED.2013.2294175	journal	February 2014
1.5-kV and 2.2-m<inline-formula> <tex-math notation="TeX">\(\Omega \) </tex-math></inline-formula>-cm<inline-formula> <tex-math notation="TeX">\(^{2}\) </tex-math></inline-formula> Vertical GaN Transistors on Bulk-GaN Substrates Nie, Hui; Diduck, Quentin; Alvarez, Brian IEEE Electron Device Letters, Vol. 35, Issue 9 https://doi.org/10.1109/LED.2014.2339197	journal	September 2014
Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV Ohta, Hiroshi; Kaneda, Naoki; Horikiri, Fumimasa IEEE Electron Device Letters, Vol. 36, Issue 11 https://doi.org/10.1109/LED.2015.2478907	journal	November 2015
Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown Hu, Zongyang; Nomoto, Kazuki; Song, Bo Applied Physics Letters, Vol. 107, Issue 24 https://doi.org/10.1063/1.4937436	journal	December 2015
GaN HEMT reliability del Alamo, J. A.; Joh, J. Microelectronics Reliability, Vol. 49, Issue 9-11 https://doi.org/10.1016/j.microrel.2009.07.003	journal	September 2009
Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature Direct Current stress Wu, Y.; Chen, C. -Y.; del Alamo, J. A. Journal of Applied Physics, Vol. 117, Issue 2 https://doi.org/10.1063/1.4905677	journal	January 2015
Reliability studies of vertical GaN devices based on bulk GaN substrates Kizilyalli, Isik C.; Bui-Quang, P.; Disney, D. Microelectronics Reliability, Vol. 55, Issue 9-10 https://doi.org/10.1016/j.microrel.2015.07.012	journal	August 2015
Vertical Power p-n Diodes Based on Bulk GaN Kizilyalli, Isik C.; Edwards, Andrew P.; Aktas, Ozgur IEEE Transactions on Electron Devices, Vol. 62, Issue 2 https://doi.org/10.1109/TED.2014.2360861	journal	February 2015

Cited By (3)

Device Design Assessment of GaN Merged P-i-N Schottky Diodes Zhang, Yuliang; Lu, Xing; Zou, Xinbo Electronics, Vol. 8, Issue 12 https://doi.org/10.3390/electronics8121550	journal	December 2019
Degradation Mechanisms of GaN‐Based Vertical Devices: A Review Meneghini, Matteo; Fabris, Elena; Ruzzarin, Maria physica status solidi (a), Vol. 217, Issue 7 https://doi.org/10.1002/pssa.201900750	journal	January 2020
Polarization Engineering to Manipulate the Breakdown Voltage for GaN‐Based PIN Diodes Hou, Xu; Chen, Xin; Jia, Xingyu physica status solidi (a), Vol. 216, Issue 20 https://doi.org/10.1002/pssa.201900210	journal	July 2019

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