Direct Optical Patterning of Quantum Dot Light‐Emitting Diodes via In Situ Ligand Exchange

Cho, Himchan; Pan, Jia‐Ahn; Wu, Haoqi; Lan, Xinzheng; Coropceanu, Igor; Wang, Yuanyuan; Cho, Wooje; Hill, Ethan A.; Anderson, John S.; Talapin, Dmitri V.

doi:10.1002/adma.202003805

Direct Optical Patterning of Quantum Dot Light‐Emitting Diodes via In Situ Ligand Exchange

Journal Article · Thu Oct 01 00:00:00 EDT 2020 · Advanced Materials

DOI:https://doi.org/10.1002/adma.202003805· OSTI ID:1804190

^[1]; Pan, Jia‐Ahn ^[1]; Wu, Haoqi ^[1]; Lan, Xinzheng ^[2]; Coropceanu, Igor ^[1]; Wang, Yuanyuan ^[3]; Cho, Wooje ^[1]; Hill, Ethan A. ^[1]; Anderson, John S. ^[1]; Talapin, Dmitri V. ^[4]

Department of Chemistry and James Franck Institute University of Chicago Chicago IL 60637 USA
Department of Chemistry and James Franck Institute University of Chicago Chicago IL 60637 USA, School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics (WNLO) Huazhong University of Science and Technology Wuhan Hubei 430074 P. R. China
Department of Chemistry and James Franck Institute University of Chicago Chicago IL 60637 USA, State Key Laboratory of Coordination Chemistry School of Chemistry and Chemical Engineering Nanjing University Nanjing Jiangsu 210023 P. R. China
Department of Chemistry and James Franck Institute University of Chicago Chicago IL 60637 USA, Center for Nanoscale Materials Argonne National Laboratory Argonne IL 60439 USA

Abstract

Precise patterning of quantum dot (QD) layers is an important prerequisite for fabricating QD light‐emitting diode (QLED) displays and other optoelectronic devices. However, conventional patterning methods cannot simultaneously meet the stringent requirements of resolution, throughput, and uniformity of the pattern profile while maintaining a high photoluminescence quantum yield (PLQY) of the patterned QD layers. Here, a specially designed nanocrystal ink is introduced, “photopatternable emissive nanocrystals” (PENs), which satisfies these requirements. Photoacid generators in the PEN inks allow photoresist‐free, high‐resolution optical patterning of QDs through photochemical reactions and in situ ligand exchange in QD films. Various fluorescence and electroluminescence patterns with a feature size down to ≈1.5 µm are demonstrated using red, green, and blue PEN inks. The patterned QD films maintain ≈75% of original PLQY and the electroluminescence characteristics of the patterned QLEDs are comparable to thopse of non‐patterned control devices. The patterning mechanism is elucidated by in‐depth investigation of the photochemical transformations of the photoacid generators and changes in the optical properties of the QDs at each patterning step. This advanced patterning method provides a new way for additive manufacturing of integrated optoelectronic devices using colloidal QDs.

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1804190

Alternate ID(s):: OSTI ID: 1831143

Journal Information:: Advanced Materials, Journal Name: Advanced Materials Journal Issue: 46 Vol. 32; ISSN 0935-9648

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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