High frequency lithium niobate film-thickness-mode optomechanical resonator

Shen, Mohan; Xie, Jiacheng; Zou, Chang-Ling; Xu, Yuntao; Fu, Wei; Tang, Hong X.

doi:10.1063/5.0020019

High frequency lithium niobate film-thickness-mode optomechanical resonator

Journal Article · Tue Sep 29 00:00:00 EDT 2020 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0020019· OSTI ID:1803797

Shen, Mohan ^[1]; ^[2]; ^[3]; Xu, Yuntao ^[2]; Fu, Wei ^[2]; ^[2]

Yale Univ., New Haven, CT (United States); OSTI
Yale Univ., New Haven, CT (United States)
Univ. of Science and Technology of China, Hefei (China)

High-frequency optomechanical resonators are in demand as transduction devices to bridge microwave and optical fields. Thin-film lithium niobate is a promising platform for implementing high-frequency optomechanics for its low optical loss and strong piezoelectric coefficients. However, its strong piezoelectricity is also known to introduce excess phonon loss. Here, we present lithium niobate optomechanical resonators with film-thickness-mode mechanical resonances up to 5.2 GHz, reaching the operating frequency regime of superconducting qubits. By engineering the mechanical anchor to minimize the phonon loss, we achieve a high quality factor up to 12 500 at cryogenic temperatures and, hence, a frequency-quality factor product of 6.6 × 10¹³. Our system also features interference between piezo-optomechanical and electro-optic modulation. A theoretical model is derived to analyze these two effects and their interference.

View Accepted Manuscript (DOE)

Research Organization:: Yale Univ., New Haven, CT (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); US Army Research Office (ARO)

Grant/Contract Number:: SC0019406

OSTI ID:: 1803797

Alternate ID(s):: OSTI ID: 1668435

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 117; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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