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Probing the local electronic structure of isovalent Bi atoms in InP

Journal Article · · Physical Review B
 [1];  [2];  [3];  [4];  [4];  [5];  [6];  [6];  [7];  [2]
  1. Eindhoven Univ. of Technology (Netherlands); OSTI
  2. Eindhoven Univ. of Technology (Netherlands)
  3. Univ. of Iowa, Iowa City, IA (United States); Eindhoven Univ. of Technology (Netherlands); Univ. of Chicago, IL (United States)
  4. Univ. of Leicester (United Kingdom)
  5. University of Shanghai for Science and Technology (China)
  6. Chinese Academy of Sciences (CAS), Shanghai (China)
  7. Chinese Academy of Sciences (CAS), Shanghai (China); Chalmers University of Technology, Göteborg (Sweden)
+ Show Author Affiliations
Cross-sectional scanning tunneling microscopy (X-STM) is used to experimentally study the influence of isovalent Bi atoms on the electronic structure of InP. In this work, we map the spatial pattern of the Bi impurity state, which originates from Bi atoms down to the sixth layer below the surface, in topographic, filled-state X-STM images on the natural {110} cleavage planes. The Bi impurity state has a highly anisotropic bowtielike structure and extends over several lattice sites. These Bi-induced charge redistributions extend along the $$\langle$$110$$\rangle$$ directions, which define the bowtielike structures we observe. Local tight-binding calculations reproduce the experimentally observed spatial structure of the Bi impurity state. In addition, the influence of the Bi atoms on the electronic structure is investigated in scanning tunneling spectroscopy measurements. These measurements show that Bi induces a resonant state in the valence band, which shifts the band edge toward higher energies. Furthermore, we show that the energetic position of the Bi-induced resonance and its influence on the onset of the valence band edge depend crucially on the position of the Bi atoms relative to the cleavage plane.
Research Organization:
The Ohio State Univ., Columbus, OH (United States); Univ. of Iowa, Iowa City, IA (United States)
Sponsoring Organization:
European Union’s Horizon 2020; National Basic Research Program of China; National Natural Science Foundation of China (NSFC); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
Grant/Contract Number:
SC0016379; SC0016447
OSTI ID:
1802971
Journal Information:
Physical Review B, Journal Name: Physical Review B Journal Issue: 2 Vol. 101; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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  • Svensson, S. P.; Hier, H.; Sarney, W. L.
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 30, Issue 2 https://doi.org/10.1116/1.3672023
journal March 2012
Influence of tip-induced band bending on tunnelling spectra of semiconductor surfaces text January 2018
Influence of tip-induced band bending on tunnelling spectra of semiconductor surfaces text January 2018
Spatially resolved electronic structure of an isovalent nitrogen center in GaAs text January 2016
Spatial structure of an individual Mn acceptor in GaAs text January 2004

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