Exciton valley depolarization in monolayer transition-metal dichalcogenides

Yang, Min; Robert, Cedric; Lu, Zhengguang; Van Tuan, Dinh; Smirnov, Dmitry; Marie, Xavier; Dery, Hanan

doi:10.1103/physrevb.101.115307

Exciton valley depolarization in monolayer transition-metal dichalcogenides

Journal Article · Thu Mar 26 00:00:00 EDT 2020 · Physical Review. B

DOI:https://doi.org/10.1103/physrevb.101.115307· OSTI ID:1802616

^[1]; Robert, Cedric ^[2]; Lu, Zhengguang ^[3]; ^[4]; Smirnov, Dmitry ^[3]; Marie, Xavier ^[2]; Dery, Hanan ^[4]

Univ. of Rochester, NY (United States); OSTI
Univ. of Toulouse (France)
Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
Univ. of Rochester, NY (United States)

The valley degree of freedom is a sought-after quantum number in monolayer transition-metal dichalcogenides. Similar to optical spin orientation in semiconductors, the helicity of absorbed photons can be relayed to the valley (pseudospin) quantum number of photoexcited electrons and holes. Also similar to the quantum-mechanical spin, the valley quantum number is not a conserved quantity. Valley depolarization of excitons in monolayer transition-metal dichalcogenides due to long-range electron-hole exchange typically takes a few ps at low temperatures. Exceptions to this behavior are monolayers MoSe₂ and MoTe₂ wherein the depolarization is much faster. Here, we elucidate the enigmatic anomaly of these materials, finding that it originates from Rashba-induced coupling of the dark and bright exciton branches next to their degeneracy point. When photoexcited excitons scatter during their energy relaxation between states next to the degeneracy region, they reach the light cone after losing the initial helicity. The valley depolarization is not as fast in monolayers WSe₂, WS₂, and MoS₂, wherein the degeneracy is absent resulting in negligible Rashba-induced coupling between bright and dark excitons.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Rochester, NY (United States)

Sponsoring Organization:: French National Research Agency (ANR); National Science Foundation (NSF); State of Florida; USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0014349

OSTI ID:: 1802616

Alternate ID(s):: OSTI ID: 1606584

Journal Information:: Physical Review. B, Journal Name: Physical Review. B Journal Issue: 11 Vol. 101; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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