Kinetic mechanism of conformal magnesium silicide (Mg2Si) film formation via reaction of Si single crystals with Mg vapor

Li, Jiaqi; Hwang, SungHwan; Itskos, Grigorios; Sandhage, Kenneth H.

doi:10.1007/s10853-019-04083-6

Title: Kinetic mechanism of conformal magnesium silicide (Mg2Si) film formation via reaction of Si single crystals with Mg vapor

Journal Article · Fri Oct 11 00:00:00 EDT 2019 · Journal of Materials Science

DOI:https://doi.org/10.1007/s10853-019-04083-6· OSTI ID:1802545

Li, Jiaqi; Hwang, SungHwan; Itskos, Grigorios;

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Research Organization:: Georgia Institute of Technology, Atlanta, GA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

DOE Contract Number:: SC0014034

OSTI ID:: 1802545

Journal Information:: Journal of Materials Science, Vol. 55, Issue 3; ISSN 0022-2461

Publisher:: Springer

Country of Publication:: United States

Language:: English

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