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Enhanced antiferromagnetic resonance linewidth in NiO/Pt and NiO/Pd

Journal Article · · Physical Review B
In this paper, we investigate the enhancement of the antiferromagnetic damping in the sintered NiO-HM (where HM is heavy metal) granular systems having NiO/HM interfaces, where HM = Pt or Pd. Under the assumption of the spin pumping model, we derive the effective interfacial damping conductance g eff , the parameter which characterizes the upper-bound estimate of the spin pumping effect, to be 12 ± 1 nm₋2 and 5 ± 1 nm₋2 for the NiO/Pt and the NiO/Pd interfaces, respectively, at room temperature. We report $$g_{\text{eff}}$$ experimentally derived in this study are an important milestone in antiferromagnetic spintronics, giving a guideline for various spin current transfer and spin interaction phenomena with antiferromagnets where the spin mixing conductance is involved.
Research Organization:
Univ. of California, Los Angeles, CA (United States)
Sponsoring Organization:
Japan Society for the Promotion of Science (JSPS); USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
Grant/Contract Number:
SC0012190
OSTI ID:
1802317
Alternate ID(s):
OSTI ID: 1599519
Journal Information:
Physical Review B, Journal Name: Physical Review B Journal Issue: 6 Vol. 101; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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