Quantum Hall Effect Measurement of Spin–Orbit Coupling Strengths in Ultraclean Bilayer Graphene/WSe2 Heterostructures
- The Ohio State Univ., Columbus, OH (United States); OSTI
- The Ohio State Univ., Columbus, OH (United States)
- Univ. of California, Riverside, CA (United States)
- National Institute for Materials Science (NIMS), Tsukuba (Japan)
Here, we study proximity-induced spin–orbit coupling (SOC) in bilayer graphene/few-layer WSe2 heterostructure devices. Contact mode atomic force microscopy (AFM) cleaning yields ultraclean interfaces and high-mobility devices. In a perpendicular magnetic field, we measure the quantum Hall effect to determine the Landau level structure in the presence of out-of-plane Ising and in-plane Rashba SOC. A distinct Landau level crossing pattern emerges when tuning the charge density and displacement field independently with dual gates, originating from a layer-selective SOC proximity effect. Analyzing the Landau level crossings and measured inter-Landau level energy gaps yields the proximity-induced SOC energy scale. The Ising SOC is ~2.2 meV, 100 times higher than the intrinsic SOC in graphene, whereas its sign is consistent with theories predicting a dependence of SOC on interlayer twist angle. The Rashba SOC is ~15 meV. Finally, we infer the magnetic field dependence of the inter-Landau level Coulomb interactions. These ultraclean bilayer graphene/WSe2 heterostructures provide a high mobility system with the potential to realize novel topological electronic states and manipulate spins in nanostructures.
- Research Organization:
- Univ. of California, Riverside, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC0010597
- OSTI ID:
- 1802136
- Journal Information:
- Nano Letters, Journal Name: Nano Letters Journal Issue: 10 Vol. 19; ISSN 1530-6984
- Publisher:
- American Chemical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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