Understanding chemical and physical mechanisms in atomic layer deposition

Richey, Nathaniel E.; de Paula, Camila; Bent, Stacey F.

doi:10.1063/1.5133390

Understanding chemical and physical mechanisms in atomic layer deposition

Journal Article · Tue Jan 21 23:00:00 EST 2020 · Journal of Chemical Physics

DOI:https://doi.org/10.1063/1.5133390· OSTI ID:1801604

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Stanford Univ., CA (United States); OSTI
Stanford Univ., CA (United States)

Atomic layer deposition (ALD) is a powerful tool for achieving atomic level control in the deposition of thin films. However, several physical and chemical phenomena can occur which cause deviation from “ideal” film growth during ALD. Understanding the underlying mechanisms that cause these deviations is important to achieving even better control over the growth of the deposited material. Herein, we review several precursor chemisorption mechanisms and the effect of chemisorption on ALD growth. We then follow with a discussion on diffusion and its impact on film growth during ALD. Together, these two fundamental processes of chemisorption and diffusion underlie the majority of mechanisms which contribute to material growth during a given ALD process, and the recognition of their role allows for more rational design of ALD parameters.

View Accepted Manuscript (DOE)

Research Organization:: Stanford Univ., CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: SC0004782

OSTI ID:: 1801604

Alternate ID(s):: OSTI ID: 1593180

Journal Information:: Journal of Chemical Physics, Journal Name: Journal of Chemical Physics Journal Issue: 4 Vol. 152; ISSN 0021-9606

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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