Plasma-enhanced atomic-layer-deposited gallium nitride as an electron transport layer for planar perovskite solar cells

Wei, Huiyun; Wu, Jionghua; Qiu, Peng; Liu, Sanjie; He, Yingfeng; Peng, Mingzeng; Li, Dongmei; Meng, Qingbo; Zaera, Francisco; Zheng, Xinhe

doi:10.1039/c9ta08929b

Title: Plasma-enhanced atomic-layer-deposited gallium nitride as an electron transport layer for planar perovskite solar cells

Journal Article · Wed Oct 16 00:00:00 EDT 2019 · Journal of Materials Chemistry. A

DOI:https://doi.org/10.1039/c9ta08929b· OSTI ID:1801499

^[1]; Wu, Jionghua ^[2]; Qiu, Peng ^[1]; Liu, Sanjie ^[1]; He, Yingfeng ^[1];

^[1]; Li, Dongmei ^[2]; Meng, Qingbo ^[2];

^[3]; Zheng, Xinhe ^[1]

Univ. of Science and Technology Beijing (China). School of Mathematics and Physics. Beijing Key Lab. for Magneto-Photoelectrical Composite and Interface Science
Chinese Academy of Sciences (CAS), Beijing (China). Key Lab. for Renewable Energy (CAS). Beijing Key Lab. for New Energy Materials and Devices. Beijing National Lab. for Condense Matter Physics. Inst. of Physics; Univ. of Chinese Academy of Sciences, Beijing (China). School of Physical Sciences
Univ. of California, Riverside, CA (United States). Dept. of Chemistry. UCR Centre of Catalysis

Low-temperature deposited gallium nitride (GaN) thin-films have been introduced into planar perovskite solar cells (PSCs) as electron transport layers (ETLs) for the first time. Compact and amorphous n-type GaN layers were uniformly coated on fluorine-doped tin oxide (FTO) glass substrates via plasma-enhanced atomic layer deposition (PEALD) technology, in which an optimized deposition temperature of 280 °C was identified and adopted. The as-prepared GaN thin-films were subsequently employed to fabricate planar PSCs with the device configuration FTO/GaN/perovskite/spiro-OMeTAD/Au. Interestingly, although a conduction-band-minimum (CBM) mismatch of 0.59 eV is found at the interface of the 50-PEALD-cycle GaN/perovskite, a significantly enhanced device efficiency from 10.38% to 15.18% has also been achieved relative to the ETL-free PSCs. Meanwhile, the current–voltage hysteresis and device stability of GaN-based PSCs can be remarkably improved. It is found that the GaN layer can promote the electron extraction and reduce recombination at the FTO/perovskite interface. This work demonstrates the feasibility and potential of GaN films as ETLs in planar PSCs.

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Research Organization:: Univ. of California, Riverside, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0001839

OSTI ID:: 1801499

Alternate ID(s):: OSTI ID: 1571691

Journal Information:: Journal of Materials Chemistry. A, Vol. 7, Issue 44; ISSN 2050-7488

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 23 works

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