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Correlating structural, electronic, and magnetic properties of epitaxial VSe2 thin films

Journal Article · · Physical Review B
The electronic and magnetic properties of transition metal dichalcogenides are known to be extremely sensitive to their structure. In this paper we study the effect of structure on the electronic and magnetic properties of mono- and bilayer VSe2 films grown using molecular beam epitaxy. VSe2 has recently attracted much attention due to reports of emergent ferromagnetism in the two-dimensional (2D) limit. To understand this compound, high-quality 1$$\textit{T}$$ and distorted 1$$\textit{T}$$ films were grown at temperatures of 200 °C and 450 °C, respectively, and studied using 4 K scanning tunneling microscopy and spectroscopy. The measured density of states and the charge density wave (CDW) patterns were compared to band structure and phonon dispersion calculations. Films in the 1$$\textit{T}$$ phase reveal different CDW patterns in the first layer compared to the second. Interestingly, we find the second layer of the 1$$\textit{T}$$ film shows a CDW pattern with 4$$\textit{a}$$ × 4$$\textit{a}$$ periodicity which is the 2D version of the bulk CDW observed in this compound. We report our phonon dispersion calculations confirm the presence of a soft phonon at the correct wave vector that leads to this CDW. In contrast, the first layer of distorted 1$$\textit{T}$$ phase films shows a strong stripe feature with varying periodicities, while the second layer displays no observable CDW pattern. Finally, we find that the monolayer 1$$\textit{T}$$ VSe2 film is weakly ferromagnetic, with ~3.5 $$μ_B$$ per unit similar to previous reports.
Research Organization:
Univ. of South Florida, Tampa, FL (United States)
Sponsoring Organization:
Gordon and Betty Moore Foundation; National Center for Theoretical Sciences; National Science Foundation(NSF); Taiwan Ministry of Science and Technology (MOST); USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Advanced Scientific Computing Research (ASCR)
Grant/Contract Number:
NA0003910
OSTI ID:
1801169
Journal Information:
Physical Review B, Journal Name: Physical Review B Journal Issue: 11 Vol. 102; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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