Multiple phase transitions in Sc doped Sb2Te3 amorphous nanocomposites under high pressure
- Shanghai University (China); Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai (China)
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai (China)
- Shanghai University (China)
- Univ. of Chicago, IL (United States). Center for Advanced Radiation Sources
Subnanosecond switching speed from an amorphous state with stable crystal precursors to the crystalline state was recently achieved in amorphous Sc-doped Sb2Te3 (a-SST) phase change materials (PCMs), which is about two orders of magnitude faster than that in the well-studied Ge2Sb2Te5 and Ge1Sb2Te4 PCMs. However, the phase change mechanism and phase stability of a-SST remain unknown. Here, we prepared amorphous Sc0.3Sb2Te3 nanocomposites within a minute amount of face-centered-cubic (FCC) type nanograins embedded in the amorphous matrix. Using in situ high-pressure synchrotron X-ray diffraction, we found that nanograins were frustrated under high pressure and gradually dissolved into the matrix around 11.0 GPa. Beyond 11.0 GPa, the a-SST matrix transformed into a uniform high density metallic like amorphous state with a five orders of magnitude drop in electric resistivity compared to the pristine materials. When further compressed to 23.97 GPa, the high density amorphous (HDA) phase switched into a body-centered-cubic (BCC) high-pressure structure, a different phase from the ambient pressure crystalline structure. Upon decompression back to ambient pressure, a pure amorphous phase was sustained. The present study provides additional insight into the phase change mechanism of amorphous nanocomposites.
- Research Organization:
- Univ. of Chicago, IL (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- Grant/Contract Number:
- FG02-94ER14466; AC02-06CH11357
- OSTI ID:
- 1800806
- Journal Information:
- Applied Physics Letters, Vol. 116, Issue 2; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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