Nanostructured silicon substrates of nanopore morphology for buffer-layer free nanoheteroepitaxial growth of InP films

Chin, Alan H.; Gan, Lin; Ning, Cun-Zheng

doi:10.1039/c9ce01046g

Title: Nanostructured silicon substrates of nanopore morphology for buffer-layer free nanoheteroepitaxial growth of InP films

Journal Article · Thu Aug 29 00:00:00 EDT 2019 · CrystEngComm

DOI:https://doi.org/10.1039/c9ce01046g· OSTI ID:1799300

^[1]; Gan, Lin ^[2]; Ning, Cun-Zheng ^[2]

nLiten Energy Corporation, Mountain View, CA (United States); Arizona State Univ., Tempe, AZ (United States). School of Electrical, Computer, and Energy Engineering
Arizona State Univ., Tempe, AZ (United States). School of Electrical, Computer, and Energy Engineering

To reduce the cost of III–V solar cells, a buffer-layer free method of depositing high-quality III–V thin films onto low-cost silicon nanostructured substrates is proposed that is enabled by stress relaxation due to the nanopore morphology of the silicon substrate. As a proof-of-concept test of the proposed method, the nanoheteroepitaxial deposition of high quality InP thin film is examined. By comparing the deposition of InP (under conditions optimized for InP deposition onto InP substrates) onto nanostructured Si(100) substrates with nanopore and nanopillar morphologies, the morphology of nanopores is found to be preferred for the nanoheteroepitaxial deposition of InP films.

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Research Organization:: nLiten Energy Corporation, Mountain View, CA (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: EE0007369

OSTI ID:: 1799300

Alternate ID(s):: OSTI ID: 1560331

Journal Information:: CrystEngComm, Vol. 21, Issue 37; ISSN 1466-8033

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 1 work

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