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16 W DBR‐free membrane semiconductor disk laser with dual‐SiC heatspreader

Journal Article · · Electronics Letters
DOI:https://doi.org/10.1049/el.2018.0101· OSTI ID:1786838
 [1];  [2];  [1];  [2];  [1];  [2];  [1]
  1. Department of Physics and Astronomy University of New Mexico 1919 Lomas Blvd. NE Albuquerque NM 87131 USA
  2. Crystalline Mirror Solutions LLC 114 E Haley St., Suite G Santa Barbara CA 93101 USA

A record output power of 16.1 W with a direct‐bonded dual‐SiC‐heatspreader distributed Bragg reflector (DBR)‐free active region at 10.5°C coolant temperature is reported. A comparison in laser performance confirms the dual‐heatspreader DBR‐free configuration dissipates heat more effectively than the single‐heatspreader geometry.

Sponsoring Organization:
USDOE
Grant/Contract Number:
NONE; AC52-06NA25396; NA0003525
OSTI ID:
1786838
Journal Information:
Electronics Letters, Journal Name: Electronics Letters Journal Issue: 7 Vol. 54; ISSN 0013-5194
Publisher:
Institution of Engineering and Technology (IET)Copyright Statement
Country of Publication:
United Kingdom
Language:
English

References (6)

106 W continuous-wave output power from vertical-external-cavity surface-emitting laser journal January 2012
DBR-free semiconductor disc laser on SiC heatspreader emitting 10.1 W at 1007 nm journal November 2017
Thermal conductivity reduction in GaAs-AlAs distributed Bragg reflectors journal January 1998
Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach journal February 2005
Optically pumped DBR-free semiconductor disk lasers journal January 2015
Semiconductor membrane external-cavity surface-emitting laser (MECSEL) journal January 2016

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