GaN‐based split phase transformer‐less PV inverter with auxiliary ZVT circuit

Xia, Yinglai; Roy, Jinia; Ayyanar, Raja

doi:10.1049/iet-pel.2019.0498

GaN‐based split phase transformer‐less PV inverter with auxiliary ZVT circuit

Journal Article · Sat Feb 01 00:00:00 EST 2020 · IET Power Electronics

DOI:https://doi.org/10.1049/iet-pel.2019.0498· OSTI ID:1786675

^[1]; ^[2]; Ayyanar, Raja ^[1]

School of Electrical Computer and Energy Engineering, Arizona State University Tempe Arizona USA
Power Systems Engineering Center National Renewable Energy Laboratory Golden Colorado USA

This paper explores performance enhancement of the common ground dynamic dc‐link (CGDL) inverter for single phase photovoltaic (PV) applications by a combination of gallium nitride (GaN) devices, split phase topology, coupled inductors, and zero voltage transition (ZVT) scheme. The CGDL inverter has the inherent advantage of minimised dc‐link capacitance and negligible leakage current due to the common ground configuration, but its reported efficiency was usually lower because of the higher dc‐link voltage used for the reduction of decoupling capacitance to a great extent. To solve the efficiency problem, in this study, a soft switching circuit is proposed for the first stage, while a coupled inductor integrated magnetics is incorporated in the second stage to reduce inductor loss, volume, and cost. Both of these topological improvements combined with the use of GaN devices facilitate in achieving high efficiency without compromising converter power density. Extensive experimental results are provided from a GaN based 1 kVA hardware prototype to demonstrate the superior performance of the CGDL inverter attaining a peak efficiency of 98.7% and a California Energy Commission efficiency of 98.5% at 75/50 kHz switching frequency.

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE

Grant/Contract Number:: EE0006521

OSTI ID:: 1786675

Alternate ID(s):: OSTI ID: 1659970

Journal Information:: IET Power Electronics, Journal Name: IET Power Electronics Journal Issue: 3 Vol. 13; ISSN 1755-4535

Publisher:: Institution of Engineering and Technology (IET)Copyright Statement

Country of Publication:: United Kingdom

Language:: English

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