Synthesis of High‐Performance Monolayer Molybdenum Disulfide at Low Temperature

Park, Ji‐Hoon; Lu, Ang‐Yu; Shen, Pin‐Chun; Shin, Bong Gyu; Wang, Haozhe; Mao, Nannan; Xu, Renjing; Jung, Soon Jung; Ham, Donhee; Kern, Klaus; Han, Yimo; Kong, Jing

doi:10.1002/smtd.202000720

Synthesis of High‐Performance Monolayer Molybdenum Disulfide at Low Temperature

Journal Article · Mon Apr 19 00:00:00 EDT 2021 · Small Methods

DOI:https://doi.org/10.1002/smtd.202000720· OSTI ID:1786576

Park, Ji‐Hoon ^[1]; Lu, Ang‐Yu ^[2]; Shen, Pin‐Chun ^[2]; Shin, Bong Gyu ^[3]; Wang, Haozhe ^[2]; Mao, Nannan ^[2]; Xu, Renjing ^[4]; Jung, Soon Jung ^[3]; Ham, Donhee ^[4]; Kern, Klaus ^[5]; Han, Yimo ^[6]; ^[1]

Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge MA 02139 USA, Research Laboratory of Electronics Massachusetts Institute of Technology Cambridge MA 02139 USA
Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge MA 02139 USA
Max Planck Institute for Solid State Research Heisenbergstrasse 1 70569 Stuttgart Germany
School of Engineering and Applied Sciences Harvard University Cambridge MA 02138 USA
Max Planck Institute for Solid State Research Heisenbergstrasse 1 70569 Stuttgart Germany, Institut de Physique École Polytechnique Fédérale de Lausanne (EPFL) 1015 Lausanne Switzerland
Department of Materials Science and NanoEngineering Rice University Houston TX 77005 USA

Abstract

The large‐area synthesis of high‐quality MoS ₂ plays an important role in realizing industrial applications of optoelectronics, nanoelectronics, and flexible devices. However, current techniques for chemical vapor deposition (CVD)‐grown MoS ₂ require a high synthetic temperature and a transfer process, which limits its utilization in device fabrications. Here, the direct synthesis of high‐quality monolayer MoS ₂ with the domain size up to 120 µm by metal‐organic CVD (MOCVD) at a temperature of 320 °C is reported. Owing to the low‐substrate temperature, the MOCVD‐grown MoS ₂ exhibits low impurity doping and nearly unstrained properties on the growth substrate, demonstrating enhanced electronic performance with high electron mobility of 68.3 cm ² V ⁻¹ s ⁻¹ at room temperature. In addition, by tuning the precursor ratio, a better understanding of the MoS ₂ growth process via a geometric model of the MoS ₂ flake shape, is developed, which can provide further guidance for the synthesis of 2D materials.

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE

Grant/Contract Number:: NONE; SC0020042

OSTI ID:: 1786576

Alternate ID(s):: OSTI ID: 1853418

Journal Information:: Small Methods, Journal Name: Small Methods Journal Issue: 6 Vol. 5; ISSN 2366-9608

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: United States

Language:: English

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