Si/Ge (111) Semicoherent Interfaces: Responses to an In‐Plane Shear and Interactions with Lattice Dislocations

Xu, Shuozhi; Li, Yang; Chen, Youping

doi:10.1002/pssb.202000274

Si/Ge (111) Semicoherent Interfaces: Responses to an In‐Plane Shear and Interactions with Lattice Dislocations

Journal Article · Mon Aug 31 00:00:00 EDT 2020 · Physica Status Solidi B. Basic Solid State Physics

DOI:https://doi.org/10.1002/pssb.202000274· OSTI ID:1786495

^[1]; Li, Yang ^[2]; Chen, Youping ^[2]

California NanoSystems Institute University of California, Santa Barbara Santa Barbara CA 93106-6105 USA
Department of Mechanical and Aerospace Engineering University of Florida Gainesville FL 32611 USA

Concurrent atomistic–continuum simulations are employed to study Si/Ge (111) semicoherent interfaces in terms of their responses to an in‐plane shear and interactions with lattice dislocations. Three types of Si/Ge interfaces, differing in interfacial structures and energy, are considered. Type I interface coincides with the shuffle‐set slip plane and contains a hexagonal network of edge dislocations. Type II and Type III interfaces both coincide with the glide‐set slip plane, yet they contain, respectively, a triangular and a hexagonal network of Shockley partial dislocations. The simulations show that among the three types of interfaces, 1) Type I interface is the least stable subject to an in‐plane shear and 2) Type III interface impedes the gliding of lattice dislocations the most significantly.

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE

Grant/Contract Number:: NONE; SC0006539

OSTI ID:: 1786495

Alternate ID(s):: OSTI ID: 1850946

Journal Information:: Physica Status Solidi B. Basic Solid State Physics, Journal Name: Physica Status Solidi B. Basic Solid State Physics Journal Issue: 12 Vol. 257; ISSN 0370-1972

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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