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Novel Spin–Orbit Torque Generation at Room Temperature in an All–Oxide Epitaxial La0.7Sr0.3MnO3/SrIrO3 System

Journal Article · · Advanced Materials
 [1];  [2];  [3];  [4];  [3];  [2];  [2];  [5];  [6];  [7];  [7];  [4];  [7];  [2];  [8];  [9]
  1. Univ. of California, Berkeley, CA (United States); Cornell University
  2. Univ. of California, Berkeley, CA (United States)
  3. Cornell Univ., Ithaca, NY (United States)
  4. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  5. Pennsylvania State Univ., University Park, PA (United States)
  6. Intel Corporation, Hillsboro, OR (United States)
  7. California State Univ, Northridge, CA (United States)
  8. Cornell Univ., Ithaca, NY (United States); Kavli Inst. at Cornell for Nanoscale Science, Ithaca, NY (United States)
  9. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Spin–orbit torques (SOTs) that arise from materials with large spin–orbit coupling offer a new pathway for energy-efficient and fast magnetic information storage. SOTs in conventional heavy metals and topological insulators are explored extensively, while 5d transition metal oxides, which also host ions with strong spin–orbit coupling, are a relatively new territory in the field of spintronics. An all-oxide, SrTiO3 (STO)//La0.7Sr0.3MnO3 (LSMO)/SrIrO3 (SIO) heterostructure with lattice-matched crystal structure is synthesized, exhibiting an epitaxial and atomically sharp interface between the ferromagnetic LSMO and the high spin–orbit-coupled metal SIO. Spin-torque ferromagnetic resonance (ST-FMR) is used to probe the effective magnetization and the SOT efficiency in LSMO/SIO heterostructures grown on STO substrates. Remarkably, epitaxial LSMO/SIO exhibits a large SOT efficiency, ξ|| = 1, while retaining a reasonably low shunting factor and increasing the effective magnetization of LSMO by ≈50%. Here, the findings highlight the significance of epitaxy as a powerful tool to achieve a high SOT efficiency, explore the rich physics at the epitaxial interface, and open up a new pathway for designing next-generation energy-efficient spintronic devices.

Research Organization:
Cornell Univ., Ithaca, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0017671; AC02-06CH11357
OSTI ID:
1785273
Alternate ID(s):
OSTI ID: 1814973
OSTI ID: 1818329
OSTI ID: 1819354
OSTI ID: 1829692
OSTI ID: 1785886
Journal Information:
Advanced Materials, Journal Name: Advanced Materials Journal Issue: 24 Vol. 33; ISSN 0935-9648
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English

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