Localized Excitons in NbSe2-MoSe2 Heterostructures

Joshi, Jaydeep; Zhou, Tong; Krylyuk, Sergiy; Davydov, Albert V.; Žutić, Igor; Vora, Patrick M.

doi:10.1021/acsnano.0c02803

Localized Excitons in NbSe₂-MoSe₂ Heterostructures

Journal Article · Wed Jul 08 00:00:00 EDT 2020 · ACS Nano

DOI:https://doi.org/10.1021/acsnano.0c02803· OSTI ID:1783789

^[1]; Zhou, Tong ^[2]; Krylyuk, Sergiy ^[3]; ^[3]; Žutić, Igor ^[2]; ^[4]

George Mason Univ., Fairfax, VA (United States); University at Buffalo
Univ. at Buffalo, NY (United States)
National Inst. of Standards and Technology, Gaithersburg, MD (United States)
George Mason Univ., Fairfax, VA (United States)

Neutral and charged excitons (trions) in atomically thin materials offer important capabilities for photonics, from ultrafast photodetectors to highly efficient light-emitting diodes and lasers. Recent studies of van der Waals (vdW) heterostructures comprised of dissimilar monolayer materials have uncovered a wealth of optical phenomena that are predominantly governed by interlayer interactions. Here, we examine the optical properties in NbSe₂-MoSe₂ vdW hetero- structures, which provide an important model system to study metal–semiconductor interfaces, a common element in optoelectronics. Through low-temperature photoluminescence (PL) microscopy, we discover a sharp emission feature, L1, that is localized at the NbSe₂-capped regions of MoSe₂. L1 is observed at energies below the commonly studied MoSe₂ excitons and trions and exhibits temperature- and power-dependent PL consistent with exciton localization in a confining potential. This PL feature is robust, observed in a variety of samples fabricated with different stacking geometries and cleaning procedures. Using first-principles calculations, we reveal that the confinement potential required for exciton localization naturally arises from the in-plane band bending due to the changes in the electron affinity between pristine MoSe₂ and NbSe₂-MoSe₂ heterostructure. Here, we discuss the implications of our studies for atomically thin optoelectronics devices with atomically sharp interfaces and tunable electronic structures.

View Accepted Manuscript (DOE)

Research Organization:: Univ. at Buffalo, NY (United States); Univ. at Buffalo, State Univ. of New York, NY (United States)

Sponsoring Organization:: National Science Foundation; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0004890

OSTI ID:: 1783789

Alternate ID(s):: OSTI ID: 1831517

Journal Information:: ACS Nano, Journal Name: ACS Nano Journal Issue: 7 Vol. 14; ISSN 1936-0851

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Localized Excitons in NbSe2-MoSe2 Heterostructures

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Localized Excitons in NbSe₂-MoSe₂ Heterostructures