High-throughput bend-strengths of ultra-small polysilicon MEMS components

Cook, Robert F.; Boyce, Brad L.; Friedman, Lawrence H.; DelRio, Frank W.

doi:10.1063/5.0049521

High-throughput bend-strengths of ultra-small polysilicon MEMS components

Journal Article · Mon May 17 00:00:00 EDT 2021 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0049521· OSTI ID:1783325

; Boyce, Brad L.; ;

The strength distribution of polysilicon bend specimens, approximately 10 μm in size, is measured using a high-throughput microelectromechanical system fabrication and testing method. The distribution is predicted from reference tests on tensile specimens and finite element analysis of the bend specimen geometry incorporated into a stochastic extreme-value strength framework. Agreement between experiment and prediction suggests that the ultra-small specimens may be at the limit of extreme-value scaling and contain only one strength-controlling flaw/specimen.

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE

Grant/Contract Number:: NA0003525

OSTI ID:: 1783325

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 118; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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