Few-layer tin sulfide (SnS): Controlled synthesis, thickness dependent vibrational properties, and ferroelectricity

Sutter, P.; Komsa, H. P.; Lu, H.; Gruverman, A.; Sutter, E.

doi:10.1016/j.nantod.2021.101082

Few-layer tin sulfide (SnS): Controlled synthesis, thickness dependent vibrational properties, and ferroelectricity

Journal Article · Mon Jan 25 00:00:00 EST 2021 · Nano Today

DOI:https://doi.org/10.1016/j.nantod.2021.101082· OSTI ID:1780783

Sutter, P. ^[1]; Komsa, H. P. ^[2]; Lu, H. ^[3]; Gruverman, A. ^[3]; Sutter, E. ^[3]

Univ. of Nebraska, Lincoln, NE (United States); University of Nebraska-Lincoln
Univ. of Oulu (Finland)
Univ. of Nebraska, Lincoln, NE (United States)

Group IV monochalcogenides, anisotropic van der Waals crystals (and black phosphorus analogues), are attracting increasing interest due to a number of exceptional properties including anisotropic optoelectronics and multiferroicity predicted and in part realized in the ultrathin limit. Due to their enhanced chemical reactivity, both exfoliation and synthesis of monolayer and few-layer crystals pose challenges not found in other 2D/layered materials, such as the transition metal dichalcogenides. In this work, we show that SnS synthesis on SnS₂ van der Waals substrates can address these challenges and consistently produces few-layer flakes, a capability that is explained via analysis of real-time microscopy of the growth process. Raman spectroscopy combined with efficient computations of the Raman-active modes across an extended thickness range enables a comprehensive understanding of the evolution of the vibrational properties of SnS with number of layers. Lateral piezoresponse force microscopy provides unprecedented insight into the stacking-dependent polarization and ferroelectric domain structures in large few-layer SnS flakes. The combined results establish a basis for further fundamental studies and applications of SnS and other group IV monochalcogenides in the few-layer regime.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Nebraska, Lincoln, NE (United States)

Sponsoring Organization:: Academy of Finland; National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0016343

OSTI ID:: 1780783

Alternate ID(s):: OSTI ID: 1809796

Journal Information:: Nano Today, Journal Name: Nano Today Vol. 37; ISSN 1748-0132

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Few-layer tin sulfide (SnS): Controlled synthesis, thickness dependent vibrational properties, and ferroelectricity

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