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Nucleation of Dislocations in 3.9 nm Nanocrystals at High Pressure

Journal Article · · Physical Review Letters
 [1];  [2];  [3];  [1];  [1];  [4];  [4];  [3];  [2];  [1]
  1. Stanford Univ., CA (United States)
  2. Korea Advanced Inst. Science and Technology (KAIST), Daejeon (Korea, Republic of)
  3. Trinity College, Hartford, CT (United States)
  4. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)

As circuitry approaches single nanometer length scales, it has become important to predict the stability of single nanometer-sized metals. The behavior of metals at larger scales can be predicted based on the behavior of dislocations, but it is unclear if dislocations can form and be sustained at single nanometer dimensions. Here, we report the formation of dislocations within individual 3.9 nm Au nanocrystals under nonhydrostatic pressure in a diamond anvil cell. We used a combination of x-ray diffraction, optical absorbance spectroscopy, and molecular dynamics simulation to characterize the defects that are formed, which were found to be surface-nucleated partial dislocations. These results indicate that dislocations are still active at single nanometer length scales and can lead to permanent plasticity.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC02-05CH11231
OSTI ID:
1777951
Alternate ID(s):
OSTI ID: 1604499
Journal Information:
Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 10 Vol. 124; ISSN 0031-9007
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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