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High performance top-gated multilayer WSe2 field effect transistors

Journal Article · · Nanotechnology
 [1];  [1];  [2];  [1];  [1];  [3];  [3];  [4];  [3];  [4]
  1. Univ. of Tennessee, Knoxville, TN (United States)
  2. ORNL
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  4. Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
+ Show Author Affiliations
In this paper, high performance top-gated WSe2 field effect transistor (FET) devices are demonstrated via a two-step remote plasma assisted ALD process. High-quality, low-leakage aluminum oxide (Al2O3) gate dielectric layers are deposited onto the WSe2 channel using a remote plasma assisted ALD process with an ultrathin (~1 nm) titanium buffer layer. The first few nanometers (~2 nm) of the Al2O3 dielectric film is deposited at relatively low temperature (i.e. 50 °C) and remainder of the film is deposited at 150 °C to ensure the conformal coating of Al2O3 on the WSe2 surface. Additionally, an ultra-thin titanium buffer layer is introduced at the WSe2 channel surface prior to ALD process to mitigate oxygen plasma induced doping effects. Excellent device characteristics with current on–off ratio in excess of 106 and a field effect mobility as high as 70.1 cm2 V–1 s–1 are achieved in a few-layer WSe2 FET device with a 30 nm Al2O3 top-gate dielectric. With further investigation and careful optimization, this method can play an important role for the realization of high performance top gated FETs for future optoelectronic device applications.
Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC05-00OR22725
OSTI ID:
1777818
Alternate ID(s):
OSTI ID: 22800730
Journal Information:
Nanotechnology, Journal Name: Nanotechnology Journal Issue: 47 Vol. 28; ISSN 0957-4484
Publisher:
IOP PublishingCopyright Statement
Country of Publication:
United States
Language:
English

References (50)

Carrier Type Control of WSe 2 Field-Effect Transistors by Thickness Modulation and MoO 3 Layer Doping journal April 2016
High Conduction Hopping Behavior Induced in Transition Metal Dichalcogenides by Percolating Defect Networks: Toward Atomically Thin Circuits journal August 2017
Interface Engineering for High-Performance Top-Gated MoS 2 Field-Effect Transistors journal July 2014
Growth Morphology and Structure Peculiarities of Superthin Titanium Films journal January 1993
High-performance multilayer WSe2 field-effect transistors with carrier type control journal July 2017
A brief review of atomic layer deposition: from fundamentals to applications journal June 2014
Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions journal April 2006
Ultrahigh electron mobility in suspended graphene journal June 2008
MoS 2 –Titanium Contact Interface Reactions journal March 2016
Interface Properties of Atomic-Layer-Deposited Al 2 O 3 Thin Films on Ultraviolet/Ozone-Treated Multilayer MoS 2 Crystals journal April 2016
High-Mobility Holes in Dual-Gated WSe 2 Field-Effect Transistors journal September 2015
Atomic Layer Deposition of Al 2 O 3 on WSe 2 Functionalized by Titanyl Phthalocyanine journal June 2016
Atomic Layer Deposition of a High- k Dielectric on MoS 2 Using Trimethylaluminum and Ozone journal July 2014
Large-Area Graphene Single Crystals Grown by Low-Pressure Chemical Vapor Deposition of Methane on Copper journal March 2011
Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe 2 Field Effect Transistors journal April 2013
High Mobility WSe 2 p - and n - Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts journal May 2014
Large Area Growth and Electrical Properties of p-Type WSe 2 Atomic Layers journal December 2014
Seeding Atomic Layer Deposition of High- k Dielectrics on Epitaxial Graphene with Organic Self-Assembled Monolayers journal May 2011
HfO 2 on MoS 2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability journal October 2013
Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition journal January 2014
Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics journal October 2014
Two-dimensional flexible nanoelectronics journal December 2014
Single-layer MoS2 transistors journal January 2011
Graphene transistors journal May 2010
Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2 journal December 2013
Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide journal March 2014
The Integration of Sub-10 nm Gate Oxide on MoS2 with Ultra Low Leakage and Enhanced Mobility journal July 2015
Damage evaluation in graphene underlying atomic layer deposition dielectrics journal August 2015
Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors journal February 2016
Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe2: enabling nanoscale direct write homo-junctions journal June 2016
Physical and chemical tuning of two-dimensional transition metal dichalcogenides journal January 2015
Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems journal January 2015
Atomic layer deposition on 2D transition metal chalcogenides: layer dependent reactivity and seeding with organic ad-layers journal January 2015
Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects journal January 2015
Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2 journal January 2013
MoS 2 functionalization for ultra-thin atomic layer deposited dielectrics journal March 2014
Raman and resonance Raman investigation of MoS 2 nanoparticles journal July 1999
Enhancement of Carrier Mobility in Semiconductor Nanostructures by Dielectric Engineering journal March 2007
Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors journal July 2014
Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors journal April 2011
Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges
  • Profijt, H. B.; Potts, S. E.; van de Sanden, M. C. M.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 29, Issue 5 https://doi.org/10.1116/1.3609974
journal September 2011
Graphene: Status and Prospects journal June 2009
Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils journal May 2009
Electronic structure of transition metal dichalcogenides monolayers 1H-MX2 (M = Mo, W; X = S, Se, Te) from ab-initio theory: new direct band gap semiconductors journal June 2012
Optical Properties and Oxidation of Evaporated Titanium Films* journal January 1957
Covalently interconnected transition metal dichalcogenide networks via defect engineering for high-performance electronic devices. text January 2021
Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems text January 2015
Enhancement of Carrier Mobility in Semiconductor Nanostructures by Dielectric Engineering text January 2007
Ultrahigh electron mobility in suspended graphene text January 2008
Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2 text January 2013

Cited By (11)

Ionic Gating of Ultrathin and Leaky Ferroelectrics journal January 2019
Layer‐Number‐Dependent Electronic and Optoelectronic Properties of 2D WSe 2 ‐Organic Hybrid Heterojunction journal July 2019
Enhanced Device Stability of Ionic Gating Molybdenum Disulfide Transistors journal May 2019
The ambipolar transport behavior of WSe2 transistors and its analogue circuits journal August 2018
Emerging nanofabrication and quantum confinement techniques for 2D materials beyond graphene journal July 2018
A WSe 2 vertical field emission transistor journal January 2019
Large-scale synthesis of 2D metal dichalcogenides journal January 2018
A high-pressure enhanced coupling effect between graphene electrical contacts and two-dimensional materials thereby improving the performance of their constituent FET devices journal January 2019
Lithium-ion conducting glass ceramics for electrostatic gating journal July 2018
Tuning the electrical properties of WSe 2 via O 2 plasma oxidation: towards lateral homojunctions journal July 2019
Lithium-ion conducting glass ceramics for electrostatic gating text January 2018

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Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
atomic layer deposition
field effect transistors
high k-dielectrics
interface engineering
transition metal dichalcogenide