Timing characterization of fast hCMOS sensors

Journal Article · Thu Apr 15 00:00:00 EDT 2021 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/5.0043796· OSTI ID:1777576

Benedetti, L. R. ; Palmer, N. E.; Hurd, E. R.; Durand, C. E.; Carpenter, A. C.; Dayton, M. S.; Golick, B.; Holder, J. P. ; Trosseille, C. ; Werellapatha, K. ; Gorman, M. G.

We describe a method of analyzing gate profile data for ultrafast x-ray imagers that allows pixel-by-pixel determination of temporal sensitivity in the presence of substantial background oscillations. With this method, systematic timing errors in gate width and gate arrival time of up to 1 ns (in a 2 ns wide gate) can be removed. In-sensor variations in gate arrival and gate width are observed, with variations in each up to 0.5 ns. This method can be used to estimate the coarse timing of the sensor, even if errors up to several ns are present.

• Sponsoring Organization: USDOE
• Grant/Contract Number: AC52-07NA27344
• OSTI ID: 1777576
• Journal Information: Review of Scientific Instruments, Journal Name: Review of Scientific Instruments Vol. 92 Journal Issue: 4; ISSN 0034-6748
• Publisher: American Institute of Physics
• Country of Publication: United States
• Language: English