Perovskite-Derivative Valleytronics

Liang, Jia; Fang, Qiyi; Wang, Hua; Xu, Rui; Jia, Shuai; Guan, Yuxuan; Ai, Qing; Gao, Guanhui; Guo, Hua; Shen, Kaijun; Wen, Xiewen; Terlier, Tanguy; Wiederrecht, Gary P.; Qian, Xiaofeng; Zhu, Hanyu; Lou, Jun

doi:10.1002/adma.202004111

Perovskite-Derivative Valleytronics

Journal Article · Sun Oct 25 00:00:00 EDT 2020 · Advanced Materials

DOI:https://doi.org/10.1002/adma.202004111· OSTI ID:1777478

Liang, Jia ^[1]; Fang, Qiyi ^[1]; Wang, Hua ^[2]; Xu, Rui ^[1]; Jia, Shuai ^[1]; Guan, Yuxuan ^[1]; Ai, Qing ^[1]; Gao, Guanhui ^[1]; Guo, Hua ^[1]; Shen, Kaijun ^[1]; Wen, Xiewen ^[3]; Terlier, Tanguy ^[1]; Wiederrecht, Gary P. ^[3]; Qian, Xiaofeng ^[2]; Zhu, Hanyu ^[1]; ^[1]

Rice Univ., Houston, TX (United States)
Texas A & M Univ., College Station, TX (United States)
Argonne National Lab. (ANL), Lemont, IL (United States). Center for Nanoscale Materials

Halide perovskites are revolutionizing the renewable energy sector owing to their high photovoltaic efficiency, low manufacturing cost, and flexibility. Their remarkable mobility and long carrier lifetime are also valuable for information technology, but fundamental challenges like poor stability under an electric field prevent realistic applications of halide perovskites in electronics. Here, it is discovered that valleytronics is a promising route to leverage the advantages of halide perovskites and derivatives for information storage and processing. The synthesized all-inorganic lead-free perovskite derivative, Cs₃Bi₂I₉, exhibits strong light-matter interaction and parity-dependent optically addressable valley degree of freedom. In this work, robust optical helicity in all odd-layer-number crystals with inversion symmetry breaking is observed, indicating excitonic coherence extending well beyond 11 layers. The excellent optical and valley properties of Cs₃Bi₂I₉ arise from the unique parallel bands, according to first principles calculations. This discovery points to new materials design principles for scalable valleytronic devices and demonstrates the promise of perovskite derivatives beyond energy applications.

View Accepted Manuscript (DOE)

Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States). Center for Nanoscale Materials (CNM)

Sponsoring Organization:: National Science Foundation (NSF); USDOE; USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE Office of Science (SC), Basic Energy Sciences (BES); Welch Foundation

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1777478

Alternate ID(s):: OSTI ID: 1804185

Journal Information:: Advanced Materials, Journal Name: Advanced Materials Journal Issue: 48 Vol. 32; ISSN 0935-9648

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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second-harmonic generation
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Perovskite-Derivative Valleytronics

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