Colossal Magnetoresistance without Mixed Valence in a Layered Phosphide Crystal

Wang, Zhi‐Cheng; Rogers, Jared D.; Yao, Xiaohan; Nichols, Renee; Atay, Kemal; Xu, Bochao; Franklin, Jacob; Sochnikov, Ilya; Ryan, Philip J.; Haskel, Daniel; Tafti, Fazel

doi:10.1002/adma.202005755

Colossal Magnetoresistance without Mixed Valence in a Layered Phosphide Crystal

Journal Article · Thu Jan 28 23:00:00 EST 2021 · Advanced Materials

DOI:https://doi.org/10.1002/adma.202005755· OSTI ID:1777359

^[1]; Rogers, Jared D. ^[1]; Yao, Xiaohan ^[1]; Nichols, Renee ^[1]; Atay, Kemal ^[1]; Xu, Bochao ^[2]; Franklin, Jacob ^[2]; Sochnikov, Ilya ^[2]; ^[3]; Haskel, Daniel ^[4]; ^[1]

Boston College, Chestnut Hill, MA (United States)
Univ. of Connecticut, Storrs, CT (United States)
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS); Dublin City University (Ireland)
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)

Materials with strong magnetoresistive responses are the backbone of spintronic technology, magnetic sensors, and hard drives. Among them, manganese oxides with a mixed valence and a cubic perovskite structure stand out due to their colossal magnetoresistance (CMR). A double exchange interaction underlies the CMR in manganates, whereby charge transport is enhanced when the spins on neighboring Mn³⁺ and Mn⁴⁺ ions are parallel. Prior efforts to find different materials or mechanisms for CMR resulted in a much smaller effect. Here an enormous CMR at low temperatures in EuCd₂P₂ without manganese, oxygen, mixed valence, or cubic perovskite structure is shown. EuCd₂P₂ has a layered trigonal lattice and exhibits antiferromagnetic ordering at 11 K. The magnitude of CMR (10(4)%) in as-grown crystals of EuCd₂P₂ rivals the magnitude in optimized thin films of manganates. In this work, the magnetization, transport, and synchrotron X-ray data suggest that strong magnetic fluctuations are responsible for this phenomenon. The realization of CMR at low temperatures without heterovalency leads to a new regime for materials and technologies related to antiferromagnetic spintronics.

View Accepted Manuscript (DOE)

Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States). Advanced Photon Source (APS)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); USDOD

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1777359

Alternate ID(s):: OSTI ID: 1785883

Journal Information:: Advanced Materials, Journal Name: Advanced Materials Journal Issue: 10 Vol. 33; ISSN 0935-9648

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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