Electron and proton damage on InGaAs solar cells having an InP window layer

Conference · Sun Oct 01 04:00:00 EDT 1995

OSTI ID:177654

Messenger, S R; Cotal, H L; Walters, R J; Summers, G P ^[1]

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1. Naval Research Lab., Washington, DC (United States)

As part of a continuing program to determine the space radiation resistance of InP/ln(0.53)Ga(0.47)As tandem solar cells, n/p In(0.53)Ga(0.47)As solar cells fabricated by RTI were irradiated with 1 MeV electrons and with 3 MeV protons. The cells were grown with a 3 micron n-lnP window layer to mimic the top cell in the tandem cell configuration for both AMO solar absorption and radiation effects. The results have been plotted against `displacement damage dose` which is the product of the nonionizing energy loss (NIEL) and the particle fluence. A characteristic radiation damage curve can then be obtained for predicting the effect of all particles and energies. AMO, 1 sun solar illumination IV measurements were performed on the irradiated InGaAs solar cells and a characteristic radiation degradation curve was obtained using the solar cell conversion efficiency as the model parameter. Also presented are data comparing the radiation response of both n/p and p/n (fabricated by NREL) InGaAs solar cells as a function of base doping concentration. For the solar cell efficiency, the radiation degradation was found to be independent of the sample polarity for the same base doping concentration.

• Research Organization: National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center
• OSTI ID: 177654
• Report Number(s): N--96-15042; NASA-CP--10180; NAS--1.55:10180; E--9943; NIPS--95-05337; CONF-9510288--
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
ATOMIC DISPLACEMENTS
ELECTRONS
GALLIUM ARSENIDES
INDIUM ARSENIDES
IRRADIATION
MEV RANGE 01-10
P-N JUNCTIONS
PHYSICAL RADIATION EFFECTS
PROTONS
SOLAR CELLS