N-Doping improves charge transport and morphology in the organic non-fullerene acceptor O-IDTBR

Paterson, Alexandra F.; Li, Ruipeng; Markina, Anastasia; Tsetseris, Leonidas; MacPhee, Sky; Faber, Hendrik; Emwas, Abdul-Hamid; Panidi, Julianna; Bristow, Helen; Wadsworth, Andrew; Baran, Derya; Andrienko, Denis; Heeney, Martin; McCulloch, Iain; Anthopoulos, Thomas D.

doi:10.1039/d0tc05861k

Title: N-Doping improves charge transport and morphology in the organic non-fullerene acceptor O-IDTBR

Journal Article · Wed Mar 10 00:00:00 EST 2021 · Journal of Materials Chemistry C

DOI:https://doi.org/10.1039/d0tc05861k· OSTI ID:1776539

^[1]; Li, Ruipeng ^[2]; Markina, Anastasia ^[3];

^[4]; MacPhee, Sky ^[5];

^[5]; Emwas, Abdul-Hamid ^[5]; Panidi, Julianna ^[6]; Bristow, Helen ^[7]; Wadsworth, Andrew ^[7];

^[5];

^[3];

^[6]; McCulloch, Iain ^[5];

^[5]

Univ. of Kentucky, Lexington, KY (United States); King Abdullah University of Science and Technology (Saudi Arabia)
Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source II (NSLS-II)
Max Planck Inst. for Polymer Research, Mainz (Germany)
National Technical University of Athens (Greece)
King Abdullah University of Science and Technology (Saudi Arabia)
Imperial College, London (United Kingdom)
Univ. of Oxford (United Kingdom)

Molecular doping has been shown to improve the performance of various organic (opto)electronic devices. When compared to p-doped systems, research into n-doped organic small-molecules is relatively limited, primarily due to the lack of suitable dopants and the often encountered unfavourable microstructural effects. These factors have prevented the use of n-doping in a wider range of existing materials, such as non-fullerene acceptors (NFAs), that have already shown great promise for a range of (opto)electronic applications. Here, we show that several different molecular n-dopants, namely [1,2-b:2',1'-d]benzo[i][2.5]benzodiazocine potassium triflate adduct (DMBI-BDZC), tetra-n-butylammonium fluoride (TBAF) and 4-(2,3-dihydro-1,3-dimethyl-1H-benzimidazol-2-yl)-N,N-dimethylbenzenamine (N-DMBI), can be used to n-dope the molecular semiconductor O-IDTBR, a promising NFA, and increase the electron field-effect mobility to >1 cm² V^-1 s^-1. By combining complementary experimental techniques with computer simulations of doping and charge carrier dynamics, we show that improved charge transport arises from synergistic effects of n-type doping and morphological changes. Specifically, a new, previously unreported dopant-induced packing orientation results in one of the highest electron mobility values reported to-date for an NFA molecule. Overall, this work highlights the importance of dopant–semiconductor interactions and their impact on morphology, showing that dopant-induced molecular packing motifs may be generic and a key element of the charge transport enhancement observed in doped organics.

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Research Organization:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012704

OSTI ID:: 1776539

Report Number(s):: BNL-221238-2021-JAAM

Journal Information:: Journal of Materials Chemistry C, Vol. 9, Issue 13; ISSN 2050-7526

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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