The progress of large area GaInP2/GaAs/Ge triple junction cell development at Spectrolab

Conference · Sun Oct 01 04:00:00 EDT 1995

OSTI ID:177648

Chiang, P K; Krut, D; Cavicchi, B T

In this paper the authors report the successful fabrication of large area, monolithic triple junction, n on p, GaInP2/GaAs/Ge cells. The highest open circuit voltage and cell efficiency (cell area: 4.078 sq cm) were measured at 2.573 V and 23.3%, respectively, under 1 sun, AMO illumination. To the authors knowledge, this is the highest single crystal, monolithic, two terminal triple junction cell efficiency demonstrated. In addition, excellent uniformity across a 3 inch diameter Ge substrates has also been achieved. An average cell efficiency of 22.8% across the 3 inch diameter wafer has been measured. They have also successfully fabricated welded cell-interconnect-cover (CIC) assemblies using these triple junction devices. The highest CIC efficiency was 23.2% (bare cell efficiency was 23.3%). The average efficiency for 25 CICs was 21.8%, which is very comparable to the 22.0% average bare cell efficiency before they were fabricated into the CICs. Finally, the authors have measured temperature coefficient and 1 MeV electron irradiation data. These will be presented in the paper.

• Research Organization: National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center
• OSTI ID: 177648
• Report Number(s): N--96-15042; NASA-CP--10180; NAS--1.55:10180; E--9943; NIPS--95-05337; CONF-9510288--
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
CASCADE SOLAR CELLS
ELECTRONS
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM PHOSPHIDES
GERMANIUM
INDIUM PHOSPHIDES
P-N JUNCTIONS
PHYSICAL RADIATION EFFECTS
TEMPERATURE DEPENDENCE