Melt-Centrifuged (Bi,Sb)2Te3: Engineering Microstructure toward High Thermoelectric Efficiency

Pan, Yu; Aydemir, Umut; Grovogui, Jann A.; Witting, Ian T.; Hanus, Riley; Xu, Yaobin; Wu, Jinsong; Wu, Chao‐Feng; Sun, Fu‐Hua; Zhuang, Hua‐Lu; Dong, Jin‐Feng; Li, Jing‐Feng; Dravid, Vinayak P.; Snyder, G. Jeffrey

doi:10.1002/adma.201802016

Title: Melt-Centrifuged (Bi,Sb)₂Te₃: Engineering Microstructure toward High Thermoelectric Efficiency

Journal Article · Sun Jul 08 00:00:00 EDT 2018 · Advanced Materials

DOI:https://doi.org/10.1002/adma.201802016· OSTI ID:1775432

Pan, Yu ^[1]; Aydemir, Umut ^[2]; Grovogui, Jann A. ^[3]; Witting, Ian T. ^[3]; Hanus, Riley ^[3]; Xu, Yaobin ^[3]; Wu, Jinsong ^[3]; Wu, Chao‐Feng ^[4]; Sun, Fu‐Hua ^[4]; Zhuang, Hua‐Lu ^[4]; Dong, Jin‐Feng ^[4];

^[4]; Dravid, Vinayak P. ^[3]; Snyder, G. Jeffrey ^[3]

Tsinghua Univ., Beijing (China); Northwestern Univ., Evanston, IL (United States)
Northwestern Univ., Evanston, IL (United States); Koc Univ., Istanbul (Turkey)
Northwestern Univ., Evanston, IL (United States)
Tsinghua Univ., Beijing (China)

Abstract Microstructure engineering is an effective strategy to reduce lattice thermal conductivity (κ _l ) and enhance the thermoelectric figure of merit ( zT ). Through a new process based on melt‐centrifugation to squeeze out excess eutectic liquid, microstructure modulation is realized to manipulate the formation of dislocations and clean grain boundaries, resulting in a porous network with a platelet structure. In this way, phonon transport is strongly disrupted by a combination of porosity, pore surfaces/junctions, grain boundaries, and lattice dislocations. These collectively result in a ≈60% reduction of κ _l compared to zone melted ingot, while the charge carriers remain relatively mobile across the liquid‐fused grains. This porous material displays a zT value of 1.2, which is higher than fully dense conventional zone melted ingots and hot pressed (Bi,Sb) ₂ Te ₃ alloys. A segmented leg of melt‐centrifuged Bi _0.5 Sb _1.5 Te ₃ and Bi _0.3 Sb _1.7 Te ₃ could produce a high device ZT exceeding 1.0 over the whole temperature range of 323–523 K and an efficiency up to 9%. The present work demonstrates a method for synthesizing high‐efficiency porous thermoelectric materials through an unconventional melt‐centrifugation technique.

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Research Organization:: Northwestern Univ., Evanston, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Natural Science Foundation of China (NSFC); National Science Foundation (NSF)

Grant/Contract Number:: SC0014520; SC0001299; 51788104; 11474176; ECCS-1542205; DMR-1121262; DGE-1324585; DE‐SC0001299; DE‐SC0014520

OSTI ID:: 1775432

Alternate ID(s):: OSTI ID: 1464434

Journal Information:: Advanced Materials, Vol. 30, Issue 34; ISSN 0935-9648

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 122 works

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