Antiferromagnetic domain switching modulated by an ultrathin Co interlayer in the Fe/Co/CoO/MgO(001) system

Yang, Yu; Liang, Jianhui; Li, Qian; Chen, Gong; Zhou, Chao; Xu, Jia; Sun, Lu; Yang, Mengmeng; N’Diaye, Alpha T.; Qiu, Zi Qiang; Wu, Yizheng

doi:10.1103/physrevb.102.024434

Antiferromagnetic domain switching modulated by an ultrathin Co interlayer in the Fe/Co/CoO/MgO(001) system

Journal Article · Tue Jul 21 00:00:00 EDT 2020 · Physical Review B

DOI:https://doi.org/10.1103/physrevb.102.024434· OSTI ID:1775395

Yang, Yu ^[1]; ^[1]; Li, Qian ^[2]; Chen, Gong ^[3]; ^[1]; Xu, Jia ^[1]; Sun, Lu ^[1]; Yang, Mengmeng ^[2]; N’Diaye, Alpha T. ^[4]; ^[2]; ^[5]

Fudan Univ., Shanghai (China)
Univ. of California, Berkeley, CA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Molecular Foundry
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
Fudan Univ., Shanghai (China); Shanghai Research Center for Quantum Sciences (China)

Using a combination of hysteresis loop, Kerr microscope, and x-ray magnetic circular dichroism measurements, in this study we investigated the antiferromagnetic (AFM) domain switching process modulated by the sub-nm thick Co inserting layer in a single crystalline Fe/Co/CoO/MgO(001). The CoO AFM domain switching occurs at lower temperature for the thicker Co interlayer, and the activation energy barrier of CoO AFM domain switching decreases as the Co interlayer thickness increases. The exchange coupling strength between the AFM spins in CoO layer and the ferromagnetic spins in the Fe/Co bilayer is found to be independent of the Co layer thickness. Our results suggest an approach to modulate the dynamic properties of AFM domains with an interfacial modification.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: National Key Research and Development Program of China; National Natural Science Foundation of China (NNSFC); Shanghai Municipal Science and Technology Major Project; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1775395

Journal Information:: Physical Review B, Journal Name: Physical Review B Journal Issue: 2 Vol. 102; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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