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Ultralow-threshold thin-film lithium niobate optical parametric oscillator

Journal Article · · Optica

Materials with strong second-order ( χ <#comment/> ( 2 ) ) optical nonlinearity, especially lithium niobate, play a critical role in building optical parametric oscillators (OPOs). However, chip-scale integration of low-loss χ <#comment/> ( 2 ) materials remains challenging and limits the threshold power of on-chip χ <#comment/> ( 2 ) OPO. Here we report an on-chip lithium niobate optical parametric oscillator at the telecom wavelengths using a quasi-phase-matched, high-quality microring resonator, whose threshold power ( ∼ <#comment/> 30 µ <#comment/> W ) is 400 times lower than that in previous χ <#comment/> ( 2 ) integrated photonics platforms. An on-chip power conversion efficiency of 11% is obtained from pump to signal and idler fields at a pump power of 93 µW. The OPO wavelength tuning is achieved by varying the pump frequency and chip temperature. With the lowest power threshold among all on-chip OPOs demonstrated so far, as well as advantages including high conversion efficiency, flexibility in quasi-phase-matching, and device scalability, the thin-film lithium niobate OPO opens new opportunities for chip-based tunable classical and quantum light sources and provides a potential platform for realizing photonic neural networks.

Sponsoring Organization:
USDOE
Grant/Contract Number:
SC0019406
OSTI ID:
1775190
Alternate ID(s):
OSTI ID: 1853221
Journal Information:
Optica, Journal Name: Optica Journal Issue: 4 Vol. 8; ISSN 2334-2536
Publisher:
Optical Society of AmericaCopyright Statement
Country of Publication:
United States
Language:
English

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