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Title: Silicon carbide detectors for sub-GeV dark matter

Journal Article · · Physical Review D

We propose the use of silicon carbide (SiC) for direct detection of sub-GeV dark matter. SiC has properties similar to both silicon and diamond but has two key advantages: (i) it is a polar semiconductor which allows sensitivity to a broader range of dark matter candidates; and (ii) it exists in many stable polymorphs with varying physical properties and hence has tunable sensitivity to various dark matter models. We show that SiC is an excellent target to search for electron, nuclear and phonon excitations from scattering of dark matter down to 10 keV in mass, as well as for absorption processes of dark matter down to 10 meV in mass. Combined with its widespread use as an alternative to silicon in other detector technologies and its availability compared to diamond, our results demonstrate that SiC holds much promise as a novel dark matter detector.

Research Organization:
Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), High Energy Physics (HEP); Israel Science Foundation (ISF); United States-Israel Binational Science Foundation (BSF); German Israel Foundation; Azrieli Foundation; Alfred P. Sloan Foundation; USDOE Laboratory Directed Research and Development (LDRD) Program; Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC) and The Molecular Foundry (TMF); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
Grant/Contract Number:
SC0019195; AC02-07CH11359; AC02-76SF00515; AC02-05CH11231; KA2401032; 1112/17; 2016155; 1937/12; I-2487-303.7/ 2017; I-2487-303.7/2017
OSTI ID:
1774674
Alternate ID(s):
OSTI ID: 1682291; OSTI ID: 1798366; OSTI ID: 1830635
Report Number(s):
FERMILAB-PUB-20-469-AE; arXiv:2008.08560; PRVDAQ; 075002
Journal Information:
Physical Review D, Journal Name: Physical Review D Vol. 103 Journal Issue: 7; ISSN 2470-0010
Publisher:
American Physical SocietyCopyright Statement
Country of Publication:
United States
Language:
English

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