High temperature selective emitters via critical coupling of weak absorbers

Martinson, Alex B.; Jeon, Nari; Gray, Stephen K.; Foley, IV, Jonathan J.

High temperature selective emitters via critical coupling of weak absorbers

Patent · Tue Oct 27 04:00:00 EDT 2020

OSTI ID:1771569

Martinson, Alex B.; Jeon, Nari; Gray, Stephen K.; Foley, IV, Jonathan J.

Tailoring the emission spectra of a solar thermophotovoltaic emitter away from that of a blackbody, thereby minimizing transmission and thermalization loss in the energy receiver, is a viable approach to circumventing the Shockley-Queisser limit to single junction solar energy conversion. Embodiments allow for radically tuned selective thermal emission that leverages the interplay between two resonant phenomena in a simple planar structure—absorption in weakly-absorbing thin films and reflection in multi-layer dielectric stacks. A virtual screening approach is employed based on Pareto optimality to identify a small number of promising structures for a selective thermal emitter from a search space of millions, several of which approach the ideal values of a step-function selective thermal emitter.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC02-06CH11357; W-31109-ENG-38

Assignee:: UChicago Argonne, LLC (Chicago, IL); William Paterson University of New Jersey (Wayne, NJ)

Patent Number(s):: 10,819,270

Application Number:: 15/923,909

OSTI ID:: 1771569

Country of Publication:: United States

Language:: English

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