Simulating the Effect of p-n Junction Fields on TRPL Transients of Thin-Film CdTe Solar Cells
Bias-dependent time-resolved photoluminescence (TRPL) transients of thin CdTe solar cells were simulated with the goal of characterizing the effect of p-n junction fields on photoluminescence decays. It was found that, although bulk lifetime could be accurately determined in field-free samples, electric field effects in solar cells lead to systematic underestimation of bulk lifetime. Modulating field strength with the application of external bias was found to have a major impact, a result corroborated by experimental data. In particular, p-n junction fields effects were found to be effectively suppressed when a cell is put far into forward bias, enabling accurate measurement of bulk lifetime in p-n junction structures.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- DOE Contract Number:
- DE-AC36-08GO28308
- OSTI ID:
- 1769867
- Report Number(s):
- NREL/CP-5900-79352; MainId:33578; UUID:ad2ccddd-5924-417e-b182-84bd0313cceb; MainAdminID:19845
- Resource Relation:
- Conference: Presented at the 2020 47th IEEE Photovoltaic Specialists Conference (PVSC), 15 June - 21 August 2020, Calgary, Canada
- Country of Publication:
- United States
- Language:
- English
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