Demonstration of Passivation Using a Low-Temperature-Grown, Al-Containing Window Layer by HVPE
We present hydride vapor phase epitaxy (HVPE) growth of single junction GaAs solar cells with Al0.4Ga0.6As front passivation layers at a growth temperature of 650°C. Devices achieved a short circuit current density of ~27.52 mA/cm2 after anti-reflection coating, similar to devices that used GaInP windows with the same bandgap, indicating that AlGaAs provides front-surface passivation resulting in a low interface recombination velocity. The low temperature growth of Al containing III-V materials by HVPE allows for compatibility with In-containing alloys in high-efficiency III-V device structures for various applications.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1768298
- Report Number(s):
- NREL/CP-5900-77040; MainId:25003; UUID:c4b587e5-acfe-42cb-84d2-b13bea1bacd0; MainAdminID:19726
- Country of Publication:
- United States
- Language:
- English
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