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Title: Synthesis and Crystallization of Atomic Layer Deposition β-Eucryptite LiAlSiO4 Thin-Film Solid Electrolytes

Journal Article · · ACS Applied Materials and Interfaces

Atomic layer deposition (ALD) was used to control the stoichiometry of thin lithium aluminosilicate films, thereby enabling crystallization into the ion-conducting β-eucryptite LiAlSiO4 phase. Here, the rapid thermal annealed ALD film developed a well-defined epitaxial relationship to the silicon substrate: β-LiAlSiO4 ($$1\bar{21}0$$)||Si (100) and β-LiAlSiO4 ($$10\bar{10}$$)||Si (001). The extrapolated room temperature ionic conductivity was found to be 1.2 × 10–7 S/cm in the [$$1\bar{21}0$$] direction. Because of the unique 1-D channel along the c axis of β-LiAlSiO4, the epitaxial thin film has the potential to facilitate ionic transport if oriented with the c axis normal to the electrode surface, making it a promising electrolyte material for three-dimensional lithium-ion microbatteries.

Research Organization:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC02-76SF00515; N00014-13-1-0466; DMR-0932761
OSTI ID:
1767976
Journal Information:
ACS Applied Materials and Interfaces, Vol. 12, Issue 51; ISSN 1944-8244
Publisher:
American Chemical Society (ACS)Copyright Statement
Country of Publication:
United States
Language:
English

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