Synthesis and Crystallization of Atomic Layer Deposition β-Eucryptite LiAlSiO4 Thin-Film Solid Electrolytes

Sheil, Ryan; Perng, Ya-Chuan; Mars, Julian; Cho, Jea; Dunn, Bruce; Toney, Michael F.; Chang, Jane P.

doi:10.1021/acsami.0c11614

Synthesis and Crystallization of Atomic Layer Deposition β-Eucryptite LiAlSiO₄ Thin-Film Solid Electrolytes

Journal Article · Sun Dec 13 23:00:00 EST 2020 · ACS Applied Materials and Interfaces

DOI:https://doi.org/10.1021/acsami.0c11614· OSTI ID:1767976

^[1]; Perng, Ya-Chuan ^[1]; ^[2]; Cho, Jea ^[1]; ^[1]; ^[2]; ^[1]

Univ. of California, Los Angeles, CA (United States)
SLAC National Accelerator Lab., Menlo Park, CA (United States)

Atomic layer deposition (ALD) was used to control the stoichiometry of thin lithium aluminosilicate films, thereby enabling crystallization into the ion-conducting β-eucryptite LiAlSiO₄ phase. Here, the rapid thermal annealed ALD film developed a well-defined epitaxial relationship to the silicon substrate: β-LiAlSiO4 ($$1\bar{21}0$$)||Si (100) and β-LiAlSiO₄ ($$10\bar{10}$$)||Si (001). The extrapolated room temperature ionic conductivity was found to be 1.2 × 10^–7 S/cm in the [$$1\bar{21}0$$] direction. Because of the unique 1-D channel along the c axis of β-LiAlSiO₄, the epitaxial thin film has the potential to facilitate ionic transport if oriented with the c axis normal to the electrode surface, making it a promising electrolyte material for three-dimensional lithium-ion microbatteries.

View Accepted Manuscript (DOE)

Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 1767976

Journal Information:: ACS Applied Materials and Interfaces, Journal Name: ACS Applied Materials and Interfaces Journal Issue: 51 Vol. 12; ISSN 1944-8244

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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